Title:
LASER IRRADIATION DEVICE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND PROJECTION MASK
Document Type and Number:
WIPO Patent Application WO/2019/035342
Kind Code:
A1
Abstract:
A laser irradiation device according to one embodiment of the present invention: is characterized by being provided with a light source for generating a laser beam, a projection lens for irradiating a prescribed region of an amorphous silicon thin film deposited on a substrate with the laser beam, and a projection mask pattern that is disposed on the projection lens and that is provided with a plurality of openings such that the prescribed region of the amorphous silicon thin film is irradiated with the laser beam; and is characterized in that the projection lens irradiates the prescribed region of the amorphous silicon thin film on the substrate moving in a prescribed direction with the laser beam through the projection mask pattern and in that the areas of at least neighboring openings in the projection mask pattern differ from each other in one row orthogonal to the moving direction.
Inventors:
MIZUMURA MICHINOBU (JP)
HATANAKA MAKOTO (JP)
ARAI TOSHINARI (JP)
HATANAKA MAKOTO (JP)
ARAI TOSHINARI (JP)
Application Number:
PCT/JP2018/028351
Publication Date:
February 21, 2019
Filing Date:
July 27, 2018
Export Citation:
Assignee:
V TECH CO LTD (JP)
International Classes:
H01L21/268; H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| WO2016186043A1 | 2016-11-24 | |||
| WO2018109912A1 | 2018-06-21 |
Foreign References:
| JP2014212178A | 2014-11-13 | |||
| JP2005536874A | 2005-12-02 | |||
| JP2002324759A | 2002-11-08 | |||
| JP2007096244A | 2007-04-12 |
Attorney, Agent or Firm:
SHIRASAKA & PATENT PARTNERS (JP)
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