Title:
LASER IRRADIATION DEVICE, THIN-FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/016146
Kind Code:
A1
Abstract:
The present invention addresses the problem of display unevenness caused, when a glass substrate is used for the liquid crystal in a liquid crystal display device, as a result of variations that arise in the characteristics of a plurality of thin-film transistors included in the glass substrate depending on variations in the energy density of laser light.
A laser irradiation device according to an embodiment of the present invention is provided with a light source which generates laser light, and a projection lens for irradiating a plurality of mutually different areas of an amorphous silicon thin-film attached to a thin-film transistor with the laser light. The laser irradiation device is characterized in that the projection lens irradiates the plurality of mutually different areas of the amorphous silicon thin-film with the laser light in such a way that the source electrode and drain electrode of the thin-film transistor are connected by a plurality of channel areas in parallel.
Inventors:
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2017/015885
Publication Date:
January 25, 2018
Filing Date:
April 20, 2017
Export Citation:
Assignee:
V TECH CO LTD (JP)
International Classes:
H01L21/336; H01L21/20; H01L21/268; H01L29/786
Domestic Patent References:
| WO2016084702A1 | 2016-06-02 |
Foreign References:
| JP2003297751A | 2003-10-17 |
Attorney, Agent or Firm:
SHIRASAKA & PATENT PARTNERS (JP)
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