Title:
LASER IRRADIATION DEVICE AND THIN-FILM TRANSISTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/092213
Kind Code:
A1
Abstract:
When present on a substrate, joint lines between annealing treatments are often seen as uneven joints. This laser irradiation device is characterized by being provided with a light source which generates a laser, a projection lens which performs annealing treatment by irradiating said laser onto a prescribed region of an amorphous silicon thin film coated on each of multiple thin film transistors on a glass substrate, and a projection mask pattern which is provided on the projection lens and which has multiple openings such that the laser is irradiated onto each of said multiple thin film transistors; when annealing treatment in a prescribed direction on the glass substrate has been completed, the projection lens moves in a direction perpendicular to the aforementioned prescribed direction and then again performs the annealing treatment in said prescribed direction; in the projection mask pattern, the number of openings gradually increases in the aforementioned perpendicular direction from the outside rows of the projection mask pattern towards the inside rows.
Inventors:
MIZUMURA MICHINOBU (JP)
NODERA NOBUTAKE (JP)
MATSUSHIMA YOSHIAKI (JP)
TANAKA MASAKAZU (JP)
MATSUMOTO TAKAO (JP)
NAKAGAWA HIDETOSHI (JP)
NODERA NOBUTAKE (JP)
MATSUSHIMA YOSHIAKI (JP)
TANAKA MASAKAZU (JP)
MATSUMOTO TAKAO (JP)
NAKAGAWA HIDETOSHI (JP)
Application Number:
PCT/JP2016/083972
Publication Date:
May 24, 2018
Filing Date:
November 16, 2016
Export Citation:
Assignee:
V TECH CO LTD (JP)
SAKAI DISPLAY PRODUCTS CORP (JP)
SAKAI DISPLAY PRODUCTS CORP (JP)
International Classes:
H01L21/20
Foreign References:
| JP2008227077A | 2008-09-25 | |||
| JP2012124366A | 2012-06-28 | |||
| JPH11243057A | 1999-09-07 | |||
| JPH09260681A | 1997-10-03 |
Attorney, Agent or Firm:
SHIRASAKA, Hajime et al. (JP)
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