LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS

WIPO Patent Application WO/2008/035679

A1

A silicon wafer (11) is irradiated with a reflection light of a laser light (L) reflected by a surface (17a) of a metal film (17) facing a surface (3) which is a laser light incoming surface of a processing object (1). A melting region (131) which is closest to the surface (17a) of the metal film (17) among six rows of melting regions (131, 132) is formed. Thus, the melting region (131) can be formed extremely close to the surface (17a) of the metal film (17).

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SAKAMOTO TAKESHI (JP)

PCT/JP2007/068099

March 27, 2008

September 18, 2007

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HAMAMATSU PHOTONICS KK (JP)
SAKAMOTO TAKESHI (JP)

B23K26/06; B23K26/38; B23K26/40; B28D5/00; H01L21/301; B23K101/40; C03B33/09

JP2004343008A	2004-12-02
JP2007141995A	2007-06-07
JP2004343008A	2004-12-02
JP2005057257A	2005-03-03

"Internal Marking of Glass Substrate with Solid-state Laser", PROCEEDINGS OF THE 45TH LASER MATERIALS PROCESSING CONFERENCE, December 1998 (1998-12-01), pages 23 - 28
"Ultrashort Pulse Laser Microprocessing of Silicon", PREPRINTS OF THE NATIONAL MEETINGS OF JAPAN WELDING SOCIETY, vol. 66, April 2000 (2000-04-01), pages 72 - 73
"Forming of Photoinduced Structure within Glass by Femtosecond Laser Irradiation", PROCEEDINGS OF THE 42ND LASER MATERIALS PROCESSING CONFERENCE, November 1997 (1997-11-01), pages 105 - 111
See also references of EP 2065120A4

HASEGAWA, Yoshiki et al. (Ginza First Bldg.10-6, Ginza 1-chom, Chuo-ku Tokyo 61, JP)

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