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Patent Searching and Data


Title:
LASER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/158672
Kind Code:
A1
Abstract:
In a modified-region formation step, a element-array-bearing substrate (20) comprising a plurality of semiconductor light-emitting elements (21) formed on the front surface (11a) of a wafer substrate (11) is irradiated with laser light (64) from the back surface (11b) of the substrate (11), thereby forming the following inside the substrate (11): first modified regions (L1) and third modified regions (L3) oriented in a y direction (corresponding to a first direction) that is parallel to the surfaces of the substrate (11); and second modified regions (L2) and fourth modified regions (L4) oriented in an x direction (corresponding to a second direction) that is parallel to the surfaces of the substrate (11) and differs from the y direction. In said step, the first modified regions (L1), the second modified regions (L2), the third modified regions (L3), and the fourth modified regions (L4) are formed at different depths from the back surface (11b) of the substrate. This makes it possible to minimize degradation of electronic elements formed on the substrate when using laser light to form a plurality of modified regions in intersecting directions inside the substrate.

Inventors:
ABE YOSHINORI (JP)
Application Number:
PCT/JP2011/062826
Publication Date:
December 22, 2011
Filing Date:
June 03, 2011
Export Citation:
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Assignee:
SHOWA DENKO KK (JP)
ABE YOSHINORI (JP)
International Classes:
H01L21/301; B23K26/04; B23K26/40; B28D5/00
Foreign References:
JP2002192371A2002-07-10
JP2003266185A2003-09-24
JP2008006492A2008-01-17
Attorney, Agent or Firm:
FURUBE, Jiro et al. (JP)
Jiro Furube (JP)
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