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Title:
LASER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/096094
Kind Code:
A1
Abstract:
A laser processing method whereby a plate-shaped object to be processed (1), comprising a hexagonal crystal SiC substrate (12) having a surface (12a) that forms an angle equivalent to the off-angle relative to the c-plane, is prepared. Preliminary modified regions (7p) are then formed inside the SiC substrate (12) along each of two preliminary lines (5p) set on both sides of a planned cutting line (5a), by irradiating a laser light (L). At this time, cracking in the SiC substrate (12) from the preliminary modified regions (7p) is made less likely to occur, compared to from a modified region (7a) that becomes the starting point for cutting. After the preliminary modified regions (7p) are formed along the preliminary lines (5p), modified regions (7a) are formed inside the SiC substrate (12) along the planned cutting line (5a) parallel to the surface (12a) and the a-plane, by irradiating the laser light (L).

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Inventors:
OKUMA Junji (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
奥間　惇治 (〒58 静岡県浜松市東区市野町１１２６番地の１　浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
Application Number:
JP2011/079052
Publication Date:
July 19, 2012
Filing Date:
December 15, 2011
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町１１２６番地の１ Shizuoka, 〒4358558, JP)
OKUMA Junji (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
International Classes:
H01L21/301; B23K26/00; B23K26/04; B23K26/38; B23K26/40
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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