LASER SEPARATION METHOD FOR WAFER - HAN'S LASER TECH IND GROUP CO LTD

Title:

LASER SEPARATION METHOD FOR WAFER

Document Type and Number:

WIPO Patent Application WO/2017/113844

Kind Code:

A1

Abstract:

A laser separation method for a silicon wafer comprises: focusing a laser beam (14) at the interior of a wafer (10) to form multiple cracking points (19), the multiple cracking points (19) being located on a separation surface (20); and under a low-temperature condition, applying opposite forces to opposite two ends of the wafer (10) such that the wafer (10) is separated into two pieces. The method realizes seamless separation of a silicon wafer, and the separated silicon wafer piece has a smooth and uniform surface. The invention has a high processing yield rate, and is applicable to batch production.

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Inventors:

WANG YANHUA (CN)
ZHUANG CHANGHUI (CN)
LI FUHAI (CN)
ZENG WEI (CN)
ZHU WEI (CN)
YIN JIANGANG (CN)
GAO YUNFENG (CN)

Application Number:

PCT/CN2016/097399

Publication Date:

July 06, 2017

Filing Date:

August 30, 2016

Export Citation:

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Assignee:

HAN'S LASER TECH IND GROUP CO LTD (CN)

International Classes:

H01L31/18; B23K26/36

Foreign References:

CN105436710A	2016-03-30
CN102672347A	2012-09-19
EP0863231B1	2001-08-29
US20070007472A1	2007-01-11
CN101355122A	2009-01-28

Attorney, Agent or Firm:

ADVANCE CHINA IP LAW OFFICE (CN)

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