Field of Disclosure

[0001] Disclosed aspects pertain to read/write circuits for resistive memory. More particularly, exemplary aspects are directed to a circuit configured for reading a resistive memory bit cell, which overcomes non-idealities of process variations.

Background

[0002] Memory devices conventionally include arrays of bit cells that each store a bit of data.

Each data bit can represent a logical zero ("0") or a logical one ("1 "), which may correspond to a state of the bit cell. During a read operation of a selected bit cell, a voltage level close to ground may be representative of "0" and a relatively higher voltage level may be representative of "1". Bit lines are coupled to various bit cells in the memory array and the bit lines couple the bit cells to other components used in read / write operations.

[0003] Magnetoresistive random access memory (MRAM) is a non-volatile memory technology where data is stored based on magnetization polarities of bit cells. In contrast to conventional RAM technologies which store data as electric charges or current flows, MRAM uses magnetic elements. A magnetic tunnel junction (MTJ) which is conventionally used as a storage element or bit cell for MRAM technology, can be formed from two magnetic layers, each of which can hold a magnetic moment, separated by an insulating (tunnel barrier) layer. Conventionally, the fixed layer is set to a particular polarity. The free layer's polarity is free to change to match that of an external magnetic field that can be applied. A change in the polarity of the free layer will change the resistance of the MTJ bit cell. For example, when the magnetization polarities are aligned or "parallel," a low resistance state exists, which corresponds to a logical "0". When the magnetization polarities are not aligned or are "anti-parallel," a high resistance state exists, which corresponds to a logical "1 ".

[0004] Thus, an MRAM or MTJ bit cell has a resistance value based on whether the bit cell represents a logical zero ("0") or a logical one ("1 "). Specifically, the resistance of the bit cell (R _DATA ) relates to the data stored in the bit cell. For the same or constant current flowing through the bit cell, if the value of R _DATA is high relative to a reference resistance (R _REF ), then a relatively high voltage will appear across the bit cell, representing a logical "1". If the value of RDATA is low relative to RREF, then a relatively low voltage will appear across the bit cell, representing a logical "0". The difference between the voltage across RDATA ( DATA) and the voltage across RREF ( REF) therefore indicates the logic state of the bit cell = DATA - REF).

[0005] Thus, in order to write a logical "0" or a logical "1," corresponding write currents are passed through the MTJ bit cell to effect a corresponding alignment of the free layer and the fixed layer, or in other words to program the MTJ bit cell to the corresponding resistance state.

[0006] For reading the bit cell, a sensing circuit is conventionally used to determine the differential voltage A Vi and a sense amplifier is used to amplify the differential voltage Vi to an amplified voltage V2. The sense amplifier's output is used to determine or read the logical state of the bit cell. As shown in FIG. 1, read circuit 100 includes a sense amplifier 110 comprising a pair of cross-coupled inverters formed by two p- channel metal oxide semiconductor (PMOS) transistors Ml and M2 and two n-channel metal oxide semiconductor (NMOS) transistors M3 and M4. This cross-coupled inverter pair resembles a latch used to store a digital value, and as such, is referred to as a latch circuit or a latch. Due to process variations, the latch in the sense amplifier 110 may develop an offset voltage known as a "latch offset voltage" or simply, an "offset voltage" of the sense amplifier, which will be explained below.

[0007] As shown in FIG. 1, PMOS transistor Ml and NMOS transistor M3 are coupled in series between a supply voltage (via a PMOS transistor) and ground (via a NMOS transistor, or footer transistor Tp). Between transistors Ml and M3 is Node A. Transistors M2 and M4 are likewise coupled in series between a supply voltage (via the PMOS transistor) and ground (via the NMOS transistor. Between transistors M2 and M4 is Node B.

[0008] Nodes A and B are connected to the sensing circuit 120, which will now be explained.

The sensing circuit includes a load transistor T7 coupled to a degeneration transistor T9 and a clamping transistor T3 coupled to Node A and to a first multiplexer transistor T5 which is connected to the bit cell (represented by variable resistor RDATA). The sensing circuit 120 also includes another load transistor T8 connected to degeneration transistor T10 and clamping transistor T4 connected to Node B and to a second multiplexer transistor T6, which is connected to a reference cell (represented by variable resistor RREF)- [0009] Load transistors T7 and T8 are diode connected. Clamping transistors T3 and T4 are controlled by the voltage FCLAMP, which is a clamp voltage used to control the flow of current through the bit cell and the reference cell. Multiplexor transistors T5 and T6 are controlled by FMUX, which is a control signal used to select the bit cell (and reference cell) during a read operation, from other bit cells in the memory array that comprises the bit cell. In a first phase, footer transistor T _F is turned Off and FMUX and FCLAMP are high, causing the multiplexer transistors and clamping transistors to be turned ON'. As a result, current flows from the supply voltage VDD through both RDATA and RREF- Accordingly, voltages FDATA and FREF develop at nodes A and B, respectively. The difference between FDATA and FREF represents a differential voltage

[0010] In a second phase, the multiplexer transistors T5 and T6 are shut off and footer transistor T _F is turned on, which brings the sense amplifier into operation. If RDATA has a higher resistance value than R _RE F (representing a logical "1"), then FDATA will be higher than FREF, and AVi will be positive at the end of the first phase. If RDATA has a lower resistance value than R _RE F (representing a logical high "0"), then FDATA will be lower than FREF, and AV _\ will be negative at the end of the first phase.

[0011] In a scenario where AV _\ is positive, PMOS transistor M2 will pass relatively less current than PMOS transistor Ml, and NMOS transistor M4 will pass relatively more current than NMOS transistor M3. As a result, the voltage on Node B (FREF at the beginning of the second phase) will drop toward ground, and the voltage on Node A (FDATA at the beginning of the second phase) will rise toward supply voltage VDD- The resulting voltages at Node A and Node B are shown as FOUT-A and FOUT-B, respectively, which are outputs of the sense amplifier. The difference between FOUT-A and FOUT-B represents a differential voltage AV2. In a scenario where A V _\ is negative, the opposite will happen. In particular, the voltage on Node A will drop toward ground, and the voltage on Node B will rise toward supply voltage VDD

[0012] In an ideal sense amplifier, if A V _\ is positive at the end of the first phase, then A V2 will be relatively more positive at the end of the second phase. Likewise, if A V _\ is negative at the end of the first phase, then Δ Fz will be relatively more negative at the end of the second phase. However, as previously mentioned, a problem can arise due to transistor mismatches resulting from, for example, process variations. Transistor mismatches arise when two transistors have parameters that are intended to be equal, but are in practice unequal. A threshold voltage (F _T H) of the transistor, for example, is a voltage that, if applied to a gate of the transistor, will cause current to flow between the source and drain. If the threshold voltages of transistors Ml and M3 do not match the corresponding threshold voltages of M2 and M4 of the sense amplifier 1 10, then an offset voltage occurs, where the offset voltage V ₀ s of the sense amplifier 110 may be created between Node A and Node B. If the offset voltage Vos diminishes the voltage difference AV _\ , then AV _\ will not properly act upon on the respective gates of transistors Ml, M2, M3, and M4. In such a scenario, the sense amplifier 1 10 of circuit 100 will fail to correctly generate an amplified voltage difference AV ₂ as expected, and the bit cell will not be read correctly.

SUMMARY

[0013] An exemplary aspect relates to a method of operating a magnetoresistive random access memory (MRAM) bit cell. The method comprises: in a sensing circuit phase, determining a first differential voltage between a data voltage across the MRAM bit cell and a reference voltage, using a sensing circuit. Further, in a pre-amplifying phase, the first differential voltage is pre-amplified to generate a pre-amplified differential voltage without offset voltage, and in a sense amplifier phase, the pre-amplified differential voltage is amplified in a sense amplifier, wherein the pre-amplified differential voltage cancels an offset voltage of the sense amplifier.

[0014] Another exemplary aspect is directed to an apparatus comprising: a magnetoresistive random access memory (MRAM) bit cell and a circuit. In different phases of operation, the circuit is configured as a sensing circuit to determine a first differential voltage between a data voltage across the MRAM bit cell and a reference voltage, a pre- amplifying circuit to pre-amplify the first differential voltage in order to generate a pre- amplified differential voltage without offset voltage, and a sense amplifier to amplify the pre-amplified differential voltage, wherein the pre-amplified differential voltage cancels an offset voltage of the sense amplifier.

[0015] Yet another exemplary aspect is directed to a system comprising: means for determining a first differential voltage between a data voltage across a magnetoresistive random access memory (MRAM) bit cell and a reference voltage, means for pre-amplifying the first differential voltage to generate a pre-amplified differential voltage without offset voltage, and means for amplifying the pre-amplified differential voltage, wherein the pre-amplified differential voltage cancels offset voltages due to process variations in the means for amplifying.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are presented to aid in the description of exemplary aspects are provided solely for illustration of the embodiments and not limitation.

[0017] FIG. 1 illustrates a circuit diagram of a conventional MRAM read circuit.

[0018] FIG. 2 illustrates a circuit diagram of an MRAM read/write circuit comprising independently reconfigurable switches.

[0019] FIG. 3 illustrates a high-level schematic diagram of a system for operating a memory device.

[0020] FIG. 4 illustrates a flowchart for operating the MRAM read/write circuit during a read procedure.

[0021] FIG. 5 illustrates a flowchart for operating the MRAM read/write circuit during a write procedure.

[0022] FIG. 6 illustrates a schematic diagram of the MRAM read/write circuit comprising switches.

[0023] FIG. 7 illustrates a control table for operating the switches in the sense amplifier of FIG.

6.

[0024] FIG. 8 illustrates the MRAM read/write circuit of FIG. 6 during an equalizing phase of a read procedure.

[0025] FIG. 9 illustrates the MRAM read/write circuit of FIG. 6 during a sensing circuit phase of a read procedure.

[0026] FIG. 10 illustrates the MRAM read/write circuit of FIG. 6 during a pre-amplifying phase of a read procedure.

[0027] FIG. 1 1 illustrates the MRAM read/write circuit of FIG. 6 during a sense amplifier phase of a read procedure.

[0028] FIG. 12 illustrates the MRAM read/write circuit of FIG. 6 during a write phase of a write procedure.

[0029] FIG. 13 illustrates a flowchart of operating a MRAM bit cell according to an exemplary aspect.

[0030] FIG. 14 illustrates a high-level diagram of a wireless device in which exemplary aspects may be advantageously employed. DETAILED DESCRIPTION

[0031] Aspects of the invention are disclosed in the following description and related drawings directed to specific embodiments of the invention. Alternate embodiments may be devised without departing from the scope of the invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.

[0032] The words "exemplary" and/or "example" are used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" and/or "example" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.

[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of embodiments of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "comprising,", "includes" and/or "including", when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

[0034] Further, many embodiments are described in terms of sequences of actions to be performed by, for example, elements of a computing device. It will be recognized that various actions described herein can be performed by specific circuits (e.g., application specific integrated circuits (ASICs)), by program instructions being executed by one or more processors, or by a combination of both. Additionally, these sequence of actions described herein can be considered to be embodied entirely within any form of computer readable storage medium having stored therein a corresponding set of computer instructions that upon execution would cause an associated processor to perform the functionality described herein. Thus, the various aspects of the invention may be embodied in a number of different forms, all of which have been contemplated to be within the scope of the claimed subject matter. In addition, for each of the embodiments described herein, the corresponding form of any such embodiments may be described herein as, for example, "logic configured to" perform the described action.

[0035] FIG. 2 generally illustrates circuit 200 which operates as a read/write circuit for resistive memory (e.g., MRAM). Circuit 200 can be configured to implement a sensing circuit 201 in a sensing circuit phase, a pre-amplifying circuit 202 in a pre-amplifying phase, and a sense amplifier 203, in a sense amplifier phase, for read operations. Circuit 200 can also be configured to implement a write driver 204, in a write phase, for write operations. The sense amplifier 203 of circuit 200 has transmission gates, which act as switches, disposed between various nodes defined by circuit 200. By independently reconfiguring the transmission gates to either pass current (in an ON' configuration) or resist passage of current (in an Off configuration), circuit 200 can be controlled to behave differently.

[0036] For example, in a sensing circuit phase implemented in sensing circuit 201, the transmission gates of circuit 200 can be controlled such that it operates as a sensing circuit. As can be seen in FIG. 2, circuit 200 develops a differential voltage between the outputs of the sensing circuit, Node A and Node B, representing the difference between DATA and REF ( VI = DATA - ^REF). However, as previously described, an offset voltage Vos can arise due to transistor mismatch, particularly threshold voltage mismatch, of the transistors in the sense amplifier. As previously noted, this offset voltage may be referred to as a latch offset voltage or an offset voltage of the sense amplifier. In order to overcome or cancel this offset voltage, exemplary circuit 200 is configured in a multiple phase operation as follows.

[0037] In a pre-amplifying phase implemented in pre-amplifying circuit 202, the transmission gates of circuit 200 can be controlled such that it operates as a pair of cross-coupled inverters resembling a latch circuit. Due to the implementation of the latch using the PMOS transistors shown, the pre-amplifying circuit 202 is also referred to as a PMOS cross-coupled latch (PCL) in this disclosure. The PMOS cross-coupled latch can compare and amplify AVi without the offset voltage Vos because the same transistors are used in both the developing and pre-amplifying phases. This may also be referred to as a latch offset cancellation (LOC) using the PCL in this description. In a sense amplifier phase implemented in sense amplifier 203, the transmission gates of circuit 200 can be controlled such that it operates as a voltage-latched sense amplifier (VLSA). Moreover, the transmission gates of circuit 200 can be controlled such that it operates as a write driver 204 during a write phase. [0038] FIG. 3 generally illustrates system 300 for reading and/or writing memory 320 (e.g., MRAM). In system 300, control device 310 sends memory control signals to memory 320 and read/write control signals to circuit 330, which may generally be configured as a read/write circuit for memory 320. The memory control signals may comprise read commands, write commands, data addresses, and/or other signals which cause memory 320 to operate. The sensing signals may comprise phase change signals and/or other signals which cause circuit 330 to operate. In this illustration, a bit cell of memory 320 can be read by a sensing circuit in circuit 300 to generate a differential signal AV _\ , which is provided to a sense amplifier in circuit 330. The sense amplifier amplifies Vi in accordance with the control signals received from control device 300 and outputs an amplified differential signal V2.

[0039] FIG. 4 generally illustrates a sense amplifier read procedure 400 for operating a sense amplifier such as a sense amplifier in circuit 330, during a read operation. Read procedure 400 may be controlled by a control device such as control device 310. Control device 310 controls read procedure 400 by sending control signals to various switches which are associated with the sense amplifier. Read procedure 400 will be described with combined reference to circuit 330 shown in FIG. 6.

[0040] In equalizing phase 410, Node A and Node B, which are both selectively set to a reference voltage but may not be equal, due to mismatch of their load capacitance, are coupled to one another such that the voltages are equalized. Equalizing the first and second nodes is performed prior to determining the first differential voltage in the sensing circuit phase, by selectively coupling the first and second nodes (Node A and Node B) to each other.

[0041] In sensing circuit phase 420, a sensing circuit in circuit 330 develops differential voltage signal AV _\ . Differential voltage signal AV _\ reflects the resistance difference between the resistance of a bit cell (RDATA) and reference resistance (RREF). AS a result of the resistance difference, voltage DATA appears at Node A and voltage REF appears at Node B. Differential voltage signal A V _\ represents the difference between DATA and REF-

[0042] In contrast to conventional implementations, a pre-amplifying phase 430 is introduced in exemplary aspects. In pre-amplifying phase 430, circuit 330 is configured to pre- amplify the differential voltage signal AV _\ , which overcomes an offset voltage os which may be present in the sense amplifier. As previously described, the offset voltage Vos may be caused by, for example, variation in the threshold voltages of the transistors that compose the sense amplifier, and due to the latch circuit structure of transistors in the sense amplifier, the offset voltage may also be referred to as a latch offset voltage of the sense amplifier. A large latch offset voltage Vos can negatively impact the probability that the bit cell will be properly read or in other words, reduce a read access pass yield (RAPY). Thus, in exemplary aspects, by pre-amplifying differential voltage signal AV _\ circuit 330 can reduce the impact of latch offset voltage Vos that may be present in the sense amplifier. This is also referred to as latch offset cancellation (LOC). The pre-amplification process drives the larger of DATA and REF toward the supply voltage DD and the smaller of DATA and REF toward ground. The pre- amplifying phase 430 therefore generates a pre-amplified differential voltage signal AVp by amplifying differential voltage signal AV _\ .

[0043] In sense amplifier phase 440, the sense amplifier amplifies the pre-amplified differential voltage signal AVp using the latch structure, whose offset can be ignored due to large voltage signal AVp, to generate an output differential voltage signal AV2 across Node A and Node B of the sense amplifier of circuit 330. Differential voltage signal A V2 comprises an amplified version of the pre-amplified differential voltage signal AVp available from the pre-amplifying phase 430.

[0044] FIG. 5 generally illustrates a sense amplifier write procedure 500 for operating circuit 330 in a write operation according to an exemplary aspect. Write procedure 400 may be controlled by control device 310. Control device 310 controls the write procedure 500 by sending control signals to various switches which are associated with circuit 330.

[0045] In write phase 510, circuit 330 receives a command to write a specified data to the memory 320. Circuit 330 is configured as a write driver in order to effect the write operation for the specified data to the memory 320.

[0046] With reference once again to FIG. 6 a detailed operation of circuit 330 in the various above-described phases, will now be described. Circuit 330 includes a sense amplifier, which comprises a latch formed by a first transistor pair and a second transistor pair. The first transistor pair comprises a PMOS transistor Ml and an NMOS transistor M3 connected in series. The latch has a first node, Node A, appears between PMOS transistor Ml and NMOS transistor M3. Likewise, the second transistor pair comprises a PMOS transistor M2 and an NMOS transistor M4 connected in series. A second node, Node B, appears between PMOS transistor Ml and NMOS transistor M3. Additionally, circuit 330 includes a first switch SI, second switch S2, third switch S3, fourth switch S4, fifth switch S5, and sixth switch S6. These switches are either ON', in which case they pass current, or they are Off, in which case they do not pass current. Control device 310 sends signals to circuit 330 to control these switches according to exemplary aspects. The switches may comprise, for example, transistor gates or any other appropriate mechanism.

[0047] Circuit 330 also comprises two degeneration PMOS transistors Tl and T2, which are turned ON during the read and write procedures in order to allow circuit 330 to be connected to positive power supply voltage VDD- Switch S4 acts as a pull-down transistor to couple the latch of the sense amplifier to ground, when turned ON. The switch S4 may selectively enable the circuit 330 to behave as a latch by turning ON and coupling the circuit 330 to ground. Alternatively, switch S4 may be turned off, thereby selectively disabling the latch and allowing the circuit 330 to generate a pre-amplified differential voltage across Node A and Node B.

[0048] In exemplary aspects, the respective gates of transistors Ml and M3 of the sense amplifier are coupled to each other and to switch S3. Switch S3 is coupled to Node B of the sense amplifier. The respective gates of transistors M2 and M4 are coupled to each other and to switch SI . The switch SI is coupled to Node A of the sense amplifier.

[0049] The respective gates of transistors Ml and M3 are coupled to each other and to switch S5. The respective gates of transistors M2 and M4 are coupled to each other and to switch S6. Switches S5 and S6 are coupled to write inputs WRITE-A and WRITE-B, respectively.

[0050] The respective gates of transistors Ml and M3 are coupled to each other and to switch S2. The respective gates of transistors M2 and M4 are coupled to each other and to switch S2. When in an ON' position, switch S2 links the respective gates of transistors M1, M2, M3, and M4.

[0051] Circuit 330 also includes a sensing circuit. The sensing circuit includes a clamping transistor T3 coupled to Node A and to a multiplexer transistor T5 which is connected to the bit cell (represented by variable resistor RDATA). The sensing circuit also includes another clamping transistor T4 connected to Node B and to another multiplexer transistor T6, which is connected to a reference cell (represented by variable resistor RREF).

[0052] Clamping transistors T3 and T4 are controlled by the voltages CLAMP, which is a clamp voltage used to control the flow of current through the bit cell and the reference cell. Multiplexor transistors T4 and T6 are controlled by MUX, which is a control signal used to select the bit cell (and reference cell) during read and write operations, from other bit cells in memory array comprising the bit cell.

[0053] As previously described, RDATA represents a resistance of a bit cell that is subject to a read or write operation. The reference cell has a resistance RREF, which represents a reference resistance. The resistance may be relatively large, indicating that the bit cell stores a logical "1", or relatively small, indicating that the bit cell stores a logical "0". When a given current is applied to the bit cell, a relatively large resistance indicating logical "1" will be reflected by a voltage DATA across the bit cell, which is larger than a voltage REF across the resistance RREF- On the other hand, a relatively small resistance indicating logical "0" will be reflected by a DATA across the bit cell, which is smaller than a voltage REF across the resistance RREF- By applying the current to the bit cell and the reference cell, data voltage DATA can be obtained across the bit cell at Node A, and reference voltage REF can be obtained across the reference cell at Node B.

[0054] FIG. 7 generally illustrates a control table 700 such as might be used by control device 310 to perform sense amplifier read procedure 400 and/or sense amplifier write procedure 500. Control device 310 can perform read procedure 400 and/or write procedure 500 by controlling each of the switches SI, S2, S3, S4, S5, and S6 in accordance with the table 700.

[0055] For example, the control device 310 can control read procedure 400 by first completing equalizing phase 410, then sensing circuit phase 420, then pre-amplifying phase 430, and finally sense amplifier phase 440. During equalizing phase 410 of read procedure 400, switches SI, S2, and S3 are ON', and switches S4, S5, and S6 are Off, as shown in FIG. 8. During sensing circuit phase 420, switches S2 and S3 are ON', and switches SI, S4, S5, and S6 are 'off, as shown in FIG. 9. During pre-amplifying phase 430, switches S I and S3 are ON', and switches S2, S4, S5, and S6 are 'off, as shown in FIG. 10. During the sense amplifier phase 440, switches SI, S3, and S4 are 'ON', and switches S2, S5, and S6 are 'off, as shown in FIG. 11.

[0056] In another example, control device 310 can control write procedure 500 by completing write phase 510. During write phase 510, switches S4, S5, and S6 are 'ON' and switches SI, S2, and S3 are 'off, as shown in FIG. 12. As FIG. 4 and FIG. 5 illustrate, the sense amplifier read procedure 400 and sense amplifier write procedure 500 are independent procedures that are independently implemented.

[0057] FIG. 8 generally illustrates circuit 330 in equalizing phase 410 where switches SI, S2, and S3 are ON', and switches S4, S5, and S6 are Off . In equalizing phase 410, Node A and Node B are coupled via switches SI, S2, and S3, each of which is in an ON' configuration. The signals F AMP and FMUX are on, as previously described for a read operation. As a result, the voltages at Node A and Node B are equalized. Moreover, the equalizing voltage at Node A and Node B is applied to the gates of PMOS transistors Ml and M2.

[0058] FIG. 9 generally illustrates circuit 330 in sensing circuit phase 420 where switches S2 and S3 are ON', and switches SI, S4, S5, and S6 are Off . During sensing circuit phase 420, the gates of transistors Ml and M2 remain coupled to one another via switch S2, and coupled to Node B via switch S3. However, since switch SI is set to an 'off position, Node A is now isolated or decoupled from Node B. As a result, Node A develops a voltage FDATA based on the resistance value RDATA of the bit cell. Node B simultaneously and independently develops a voltage FREF based on the resistance value RREF- Moreover, the voltage at Node B is applied to the gates of transistors Ml and M2. During the sensing circuit phase 420, differential voltage AVi, defined as the difference between voltages FDATA and FREF, develops between Node A and Node B, respectively.

[0059] FIG. 10 generally illustrates circuit 330 in pre-amplifying phase 430 where switches SI and S3 are ON', and switches S2, S4, S5, and S6 are Off . As a result, the voltage FDATA at Node A is applied to the gate of transistor M2 (via switch SI) and the voltage REF at Node B is applied to the gate of transistor Ml (via switch S3). Since switch S2 is in an Off configuration, voltage FREF (applied to the gate of transistors Ml) is decoupled from voltage FDATA (applied to the gate of transistor M2). As a result, transistor Ml will pass relatively more or less current than transistor M2 depending on whether AFi is positive or negative.

[0060] The current difference between Ml and M2 is not affected by threshold voltage mismatch of Ml and M2 because the transistors used in the sensing circuit phase 420 and pre-amplifying phase 430 are identical. The respective threshold voltages of Ml and M2 are already reflected in FDATA and FREF- Thus, AFi is amplified without the offset voltage.

[0061] In one possible scenario, the bit cell stores a logical "1". This state is represented by a resistance RDATA having a high resistance value. In this scenario, FDATA will be high relative to FREF and A V _\ will be positive upon entering pre-amplifying phase 430. Accordingly, voltage applied to the gate of PMOS transistor M2 (FDATA) will be high relative to the voltage applied to the gate of PMOS transistor Ml (FREF), and less current will flow to Node B through PMOS transistor M2 than to Node A through PMOS transistor Ml . As a result, the voltage at Node A will tend to rise, and the voltage at Node B will tend to diminish. Because these voltages are fed back to the gates of transistors M2 and Ml, respectively, positive feedback will occur. As a result, the voltages at Node A and Node B will be driven closer to FDD and Vss, respectively.

[0062] In the foregoing scenario, the result of pre-amplifying phase 430 is that the positive differential voltage A V\ is pre-amplified, yielding a pre-amplified differential voltage AVp of greater magnitude than A V _\ . It will be understood that if AV _\ had been negative in the foregoing scenario (that is, if the bit cell had stored a logical "0"), then the voltages FDATA and FREF would have had the opposite effect on transistors Ml and M2 and the voltages at Node A and Node B would have been driven closer to Fss and FDD, respectively. Thus, the pre-amplifying phase 430 would have pre-amplified negative differential voltage AV _\ to a more negative pre-amplified differential voltage AVp.

[0063] FIG. 1 1 generally illustrates the circuit 330 in sense amplifier phase 440 where switches S I, S3, and S4 are ON', and switches S2, S5, and S6 are Off . In sense amplifier phase 440, Node A and Node B are decoupled from the bit cell and RREF- Nodes A and B provide a pre-amplified differential voltage A Vp which is large enough to suppress the offset voltage in latch phase. In a scenario where pre-amplified differential voltage A Vp is positive, the voltage at Node A will be higher than the voltage at Node B, which will cause ouT A to rise rapidly towards FDD through transistors Ml and T l . The voltage FouT-B will similarly rapidly fall towards ground or Fss through transistors M4 and S4. As a result, the differential voltage A V2 = FOUT-A - FOUT-B will be available faster and will be correctly positive. In a scenario where pre-amplified differential voltage AFp is negative, the transistors are each in an opposite configuration, and the output AFz of the sense amplifier is similarly obtained in a fast and stable manner without impacts of latch offsets.

[0064] While implementations of circuit 330 have been described above with regard to the various phases of a read operation, circuit 330 can also configured for a write operation according to exemplary aspects, as shown in FIG. 12. It will be noted that implementing the write operation involves reuse of components discussed above for the read operation, which results in cost savings. In FIG. 12, circuit 330 is illustrated in write phase 510 where switches S4, S5, and S6 are ON', and switches SI, S2, and S3 are Off. In write phase 510, write signal WRITE-A is applied to the gates of transistors Ml and M3 via switch S5. Additionally or alternatively, write signal WRITE-B is applied to the gates of transistors M2 and M4 via switch S6. As previously noted, for writing the MTJ bit cell, current is passed through the bit cell to effect a corresponding alignment of the free layer and the fixed layer, which changes the resistance to reflect the logical value being written. Thus, in order to write a logical value of "1" in the bit cell or the reference cell, WRITE-A or WRITE-B, respectively, will be driven to a high voltage. These voltages are driven through switches S5 and S6, respectively. For a write of "0" in the bit cell or the reference cell, the opposite voltages will be driven on ^WRITE A and WRITE-B, effecting a lower resistance to be programmed into the bit cell or reference cell.

[0065] Accordingly, it will be appreciated that aspects include various methods for performing the processes, functions and/or algorithms disclosed herein. For example, as illustrated in FIG. 13, an aspect can include a method (1300) of operating a magnetoresistive random access memory (MRAM) bit cell. The method comprises: in a sensing circuit phase, determining a first differential voltage between a data voltage across the bit cell and a reference voltage, using a sensing circuit - Block 1302; in a pre-amplifying phase, pre-amplifying the first differential voltage to generate a pre-amplified differential voltage without offset voltage - Block 1304; and in a sense amplifier phase, amplifying the pre-amplified differential voltage in a sense amplifier, wherein the pre-amplified differential voltage cancels an offset voltage in a latch of the sense amplifier - Block 1306.

[0066] Referring to FIG. 14, a block diagram of a particular illustrative aspect of wireless device 1400 configured according to exemplary aspects is depicted. Wireless device 1400 includes processor 1464 coupled to memory 1432. Memory 1432 may include a MRAM array, and processor 1464 and memory 1432 may be coupled to circuit 200 of FIG. 2 for operating MRAM bit cells of the MRAM array in one aspect. FIG. 14 also shows display controller 1426 that is coupled to processor 1464 and to display 1428. Coder/decoder (CODEC) 1434 (e.g., an audio and/or voice CODEC) can be coupled to processor 1464. Other components, such as wireless controller 1440 (which may include a modem) are also illustrated. Speaker 1436 and microphone 1438 can be coupled to CODEC 1434. FIG. 14 also indicates that wireless controller 1440 can be coupled to wireless antenna 1442. In a particular aspect, processor 1464, display controller 1426, memory 1432, CODEC 1434, and wireless controller 1440 are included in a system- in-package or system-on-chip device 1422.

[0067] In a particular aspect, input device 1430 and power supply 1444 are coupled to the system-on-chip device 1422. Moreover, in a particular aspect, as illustrated in FIG. 14, display 1428, input device 1430, speaker 1436, microphone 1438, wireless antenna 1442, and power supply 1444 are external to the system-on-chip device 1422. However, each of display 1428, input device 1430, speaker 1436, microphone 1438, wireless antenna 1442, and power supply 1444 can be coupled to a component of the system-on-chip device 1422, such as an interface or a controller.

[0068] It should be noted that although FIG. 14 depicts a wireless communications device, processor 1464 and memory 1432 may also be integrated into a set-top box, a music player, a video player, an entertainment unit, a navigation device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, a smart phone, or a computer.

[0069] Those of skill in the art will appreciate that information and signals may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.

[0070] Accordingly, an exemplary aspect can include a computer readable media embodying a method of operating an MRAM bit cell. Accordingly, the invention is not limited to illustrated examples and any means for performing the functionality described herein are included in embodiments of the invention.

[0071] Further, those of skill in the art will appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.

[0072] The various illustrative logical blocks, modules, and circuits described in connection with the embodiments disclosed herein may be implemented or performed with a general purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. A processor may also be implemented as a combination of computing devices, e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.

[0073] The methods, sequences and/or algorithms described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal (e.g., UE). In the alternative, the processor and the storage medium may reside as discrete components in a user terminal.

[0074] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functions may be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media may be any available media that can be accessed by a computer. By way of example, and not limitation, such computer-readable media can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Also, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

While the foregoing disclosure shows illustrative embodiments of the invention, it should be noted that various changes and modifications could be made herein without departing from the scope of the invention as defined by the appended claims. The functions, steps and/or actions of the method claims in accordance with the embodiments of the invention described herein need not be performed in any particular order. Furthermore, although elements of the invention may be described or claimed in the singular, the plural is contemplated unless limitation to the singular is explicitly stated.