Title:
LATERAL-TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/111363
Kind Code:
A1
Abstract:
This lateral-type semiconductor device is provided with: a GaN layer (11) and an AlGaN layer (12); a source electrode (13) and a drain electrode (14) formed on the AlGaN layer (12) such that a spacing is present therebetween; a gate electrode (15) formed on the AlGaN layer (12) and between the source electrode (13) and the drain electrode (14); a first insulating film (16) for inhibiting current collapse, the first insulating film being formed in a region on the AlGaN layer (12) and between the drain electrode (13) and the gate electrode (15) such that a predefined spacing is present with respect to the gate electrode (15); and a second insulating film (17) formed so as to fill a region between the end section of the first insulating film (16) on the side gate electrode (15) side and the gate electrode (15). Provided is a lateral-type semiconductor device in which it is possible to inhibit leak current and increase voltage resistance while suppressing the phenomenon of current collapse.
Inventors:
INA HIROYOSHI
Application Number:
PCT/JP2012/050425
Publication Date:
August 23, 2012
Filing Date:
January 12, 2012
Export Citation:
Assignee:
SHARP KK (JP)
INA HIROYOSHI
INA HIROYOSHI
International Classes:
H01L21/338; H01L29/06; H01L29/41; H01L29/423; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| WO2007040160A1 | 2007-04-12 |
Foreign References:
| JP2004200248A | 2004-07-15 | |||
| JP2004214471A | 2004-07-29 | |||
| JP2009164300A | 2009-07-23 | |||
| JP2010238982A | 2010-10-21 | |||
| JP2008205392A | 2008-09-04 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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