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Title:
LAYERED KZNSB, LAYERED ZNSB, KZNSB NANOSHEET, ZNSB NANOSHEET, AND PREPARATION METHODS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/151644
Kind Code:
A1
Abstract:
The present invention relates to layered ZnSb, a ZnSb nanosheet, and preparation methods therefor. According to the present invention, a ZnSb nanosheet can be formed by efficiently releasing ZnSb, which is a polymorphic layered material having a structure different from that of a conventional three-dimensional ZnSb. A high-quality layered ZnSb nanosheet prepared by the process can be mass-produced so as to applicable to a thermoelectric material and the like. According to the present invention, a layered ZnSb structure can be prepared through K intercalation and deintercalation into/from a three-dimensional ZnSb structure, and a layered structure, having been newly manufactured, can be readily released.

Inventors:
KIM, Sung-wng (#105-901, 13-10 Seocho-daero 65-gil,,Seocho-gu, Seoul, 06602, KR)
LEE, Kyu-hyoung (#104-1302, 86 Mangu-ro 20-gil,,Dongdaemun-gu, Seoul, 02501, KR)
SONG, Jun-seong (#301, 84 Irwol-ro,Jangan-su, Suwon-si, Gyeonggi-do, 16421, KR)
Application Number:
KR2018/016085
Publication Date:
August 08, 2019
Filing Date:
December 18, 2018
Export Citation:
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Assignee:
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (2066, Seobu-ro,Jangan-gu, Suwon-si, Gyeonggi-do, 16419, KR)
International Classes:
C30B29/10; C30B29/68; C30B33/00; H01L35/14; H01L43/10
Foreign References:
KR20170039851A2017-04-12
KR20170039852A2017-04-12
KR101403091B12014-07-01
JP5910887B22016-05-11
Other References:
BENNETT, JOSEPH W. ET AL.: "Hexagonal ABC Semiconductors as Ferroelectrics", PHYSICAL REVIEW LETTERS, vol. 109, no. 16, 2012, pages 167602-1 - 167602-5, XP055629247
Attorney, Agent or Firm:
KIM, In-cheol (14 Banpo-daero 23gil, Seocho-gu, Seoul, 06656, KR)
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