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Patent Searching and Data


Title:
LEAD-FREE PEROVSKITE PIEZOELECTRIC THIN FILM AND METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2020/153592
Kind Code:
A1
Abstract:
Disclosed is a method of producing a lead-free perovskite piezoelectric thin film, the method comprising: a step of forming a first synthetic solution and a second synthetic solution; a step of coating the first synthetic solution onto a substrate and heat-treating same to form a porous piezoelectric lower thin film having a plurality of pores; and a step of coating the second synthetic solution onto the porous piezoelectric lower thin film and heat-treating same to form a dense piezoelectric upper thin film covering the porous piezoelectric lower thin film and the plurality of pores. Also disclosed is a lead-free perovskite piezoelectric thin film.

Inventors:
KOO CHANG-YOUNG (KR)
WOO DO-HYEON (KR)
LEE SUN-YOUNG (KR)
Application Number:
PCT/KR2019/015966
Publication Date:
July 30, 2020
Filing Date:
November 20, 2019
Export Citation:
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Assignee:
QUINTESS CO LTD (KR)
International Classes:
H01L41/318; B05D1/00; B05D3/02; B05D7/24; H01L41/187; H01L41/193
Foreign References:
KR20000042389A2000-07-15
KR101849734B12018-04-18
KR101937149B12019-01-10
US6232167B12001-05-15
KR20160064969A2016-06-08
Attorney, Agent or Firm:
DAE-A INTELLECTUAL PROPERTY CONSULTING (KR)
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