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Document Type and Number:
WIPO Patent Application WO/2014/115800
Kind Code:
Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to said active layer. This LED element, which is obtained by inducing c-axis growth of nitride semiconductor layers on top of a support substrate, has the following: a first semiconductor layer comprising an n-type nitride semiconductor; a current-diffusion layer; an active layer comprising a nitride semiconductor; and a second semiconductor layer comprising a p-type nitride semiconductor. The current-diffusion layer contains a heterojunction between a third semiconductor layer comprising InxGa1 − xN (with 0 < x ≤ 0.05) and a fourth semiconductor layer comprising n-Aly1Gay2Iny3N (with 0 < y1 < 1, 0 < y2 < 1, 0 ≤ y3 ≤ 0.05, and y1+y2+y3 = 1), said third semiconductor layer being between 10 and 25 nm thick, inclusive.

MIYOSHI,Kohei (1194 Sazuchi, Bessho-cho, Himeji-sh, Hyogo 24, 〒6710224, JP)
TSUKIHARA,Masashi (1194 Sazuchi, Bessho-cho, Himeji-sh, Hyogo 24, 〒6710224, JP)
Application Number:
Publication Date:
July 31, 2014
Filing Date:
January 23, 2014
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USHIO DENKI KABUSHIKI KAISHA (2-6-1, Ote-machi Chiyoda-k, Tokyo 50, 〒1008150, JP)
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Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (SHIN-OSAKA MT Bldg. 1, 13-9 Nishinakajima 5-chome, Yodogawa-ku, Osaka-sh, Osaka 11, 〒5320011, JP)
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