LIGHT DETECTION ELEMENT AND LIGHT DETECTION DEVICE

Title:

LIGHT DETECTION ELEMENT AND LIGHT DETECTION DEVICE

Document Type and Number:

WIPO Patent Application WO/2020/079897

Kind Code:

A1

Abstract:

This light detection element includes: a semiconductor substrate; a first conductive type light absorption layer formed on the semiconductor substrate; a first conductive type cap layer formed on the light absorption layer; and a second conductive type semiconductor area which is formed in the cap layer and forms a pn junction with the cap layer. A depletion layer formed around the semiconductor area does not reach the light absorption layer, when a reverse bias is not applied to the pn junction, and exceeds a position at 50% of the thickness of the light absorption layer from a cap layer side, when the reverse bias of 20 V is applied to the pn junction.

Inventors:

MASE MITSUHITO (JP)
TAGUCHI KEIKI (JP)
ISHIHARA HAJIME (JP)
YAMAMOTO HIROO (JP)
SHIMADA AKIHIRO (JP)

Application Number:

PCT/JP2019/027418

Publication Date:

April 23, 2020

Filing Date:

July 10, 2019

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)

International Classes:

H01L31/10; G01S17/08

Foreign References:

US20070034898A1	2007-02-15
JP2002231992A	2002-08-16
JP2007311720A	2007-11-29
JPH03230582A	1991-10-14
JPS631079A	1988-01-06
JP2004241588A	2004-08-26
JP2013224931A	2013-10-31
JP2014077658A	2014-05-01
JP2011133464A	2011-07-07

Other References: