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Title:
LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2023/079407
Kind Code:
A1
Abstract:
Provided is a light-emitting apparatus having high emission efficiency. Provided is a light-emitting apparatus having a light-emitting device A and a light-emitting device B. The light-emitting device A has a first electrode A, a second electrode A, a light-emitting layer A between the first electrode A and the second electrode A, and a first layer A between the first electrode A and the light-emitting layer A. The light-emitting device B has a first electrode B, a second electrode B, a light-emitting layer B between the first electrode B and the second electrode B, a first layer B between the first electrode B and the light-emitting layer B, and a second layer B between the first electrode B and the light-emitting layer B. The light-emitting layer A has a light-emitting substance A. The light-emitting layer B has a light-emitting substance B. The emission peak wavelength of the light-emitting substance A is shorter than the emission peak wavelength of the light-emitting substance B. The first layer A and the first layer B contain the same material. The ordinary refractive index of the first layer A is lower than the ordinary refractive index of the light-emitting layer A at the emission peak wavelength of the light-emitting substance A. The ordinary refractive index of the first layer A is at most 1.75 at the emission peak wavelength of the light-emitting substance A.

Inventors:
WATABE TAKEYOSHI (JP)
OHSAWA NOBUHARU (JP)
SEO SATOSHI (JP)
Application Number:
PCT/IB2022/060213
Publication Date:
May 11, 2023
Filing Date:
October 25, 2022
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10K50/00; G09F9/30; H05B33/12; H10K50/15; H10K50/16; H10K59/00
Domestic Patent References:
WO2018211377A12018-11-22
Foreign References:
JP2000323277A2000-11-24
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