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Title:
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2007/136000
Kind Code:
A1
Abstract:
[PROBLEMS] To reduce loss of a light emitting quantity due to total reflection, by arranging a light transmitting layer having refraction index inclination on the surface of a semiconductor light emitting element in a light emitting device such as a light emitting diode or the like. [MEANS FOR SOLVING PROBLEMS] A semiconductor light emitting element (10) and electrodes (3, 4) mainly composed of Ga-N are arranged on a sapphire substrate (2). On the surface of the semiconductor light emitting element (10), a light transmitting layer (20) is arranged. The light emitting layer (20) is formed by a CVD method. Inside the light transmitting layer (20), oxygen concentration reduces and nitrogen concentration increases toward the semiconductor light emitting element (10). Therefore, the light transmitting layer (20) has a refraction index which becomes smaller as it separates from the semiconductor element (10).

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Inventors:
AIHARA MASAMI (JP)
Application Number:
PCT/JP2007/060247
Publication Date:
November 29, 2007
Filing Date:
May 18, 2007
Export Citation:
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Assignee:
ALPS ELECTRIC CO LTD (JP)
AIHARA MASAMI (JP)
International Classes:
H01L33/44
Foreign References:
JPS5363884A1978-06-07
JP2001192821A2001-07-17
JPH0756002A1995-03-03
JP2005277181A2005-10-06
JPH0748673A1995-02-21
JPH07235684A1995-09-05
JP2001203392A2001-07-27
JP2006018233A2006-01-19
Attorney, Agent or Firm:
NOZAKI, Teruo (1-21-11 Higashi-Ikebukuro Toshima-k, Tokyo 13, JP)
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