Title:
LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/041521
Kind Code:
A1
Abstract:
Disclosed is a light-emitting device comprising a group III nitride semiconductor
layer which is composed of a group III nitride semiconductor having a nonpolar
or semipolar major surface and has a multilayer structure including at least
an n-type layer and a p-type layer. A surface of the group III nitride semiconductor
layer on the light extraction side is a mirror surface. This light-emitting device
may further comprises a transparent electrode which is in contact with the surface
of the group III nitride semiconductor layer on the light extraction side. In
this case, a surface of the transparent electrode on the light extraction side
is preferably a mirror surface.
Inventors:
OKAMOTO KUNIYOSHI (JP)
OHTA HIROAKI (JP)
OHTA HIROAKI (JP)
Application Number:
PCT/JP2007/068398
Publication Date:
April 10, 2008
Filing Date:
September 21, 2007
Export Citation:
Assignee:
ROHM CO LTD (JP)
OKAMOTO KUNIYOSHI (JP)
OHTA HIROAKI (JP)
OKAMOTO KUNIYOSHI (JP)
OHTA HIROAKI (JP)
International Classes:
H01L33/10; H01L33/12; H01L33/22; H01L33/32; H01L33/42; H01L33/44; H01L33/56; H01L33/62
Foreign References:
| US20020079498A1 | 2002-06-27 | |||
| JP2000216497A | 2000-08-04 |
Other References:
CHAKRABORTY A. ET AL.: "Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with driven-current-independent electroluminescence emission peak", APPL. PHYS. LETT., vol. 85, no. 22, 2004, pages 5143 - 5145, XP001234010
SHARMA R. ET AL.: "Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode", APPL. PHYS. LETT., vol. 87, no. 23, 2005, pages 231110-1 - 231110-3, XP012076712
PURVIS G.: "Changing the crystal face of gallium nitride", III-VS REVIEW, vol. 18, no. 8, 2005, pages 26 - 28, XP005159213
MASUI H. ET AL.: "Polarized Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate", JAP. J. OF APPL. PHYS., vol. 44, no. 43, 2005, pages L1329 - L1332, XP001502503
FUNATO M. ET AL.: "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar [1122[ GaN Bulk Substrates", JAP. J. OF APPL. PHYS., vol. 45, no. 26, July 2006 (2006-07-01), pages L659 - L662, XP001502532
OKAMOTO K. ET AL.: "Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals", JAP. J. OF APPL. PHYS., vol. 45, no. 45, November 2006 (2006-11-01), pages L1197 - L1199, XP003021792
SHARMA R. ET AL.: "Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode", APPL. PHYS. LETT., vol. 87, no. 23, 2005, pages 231110-1 - 231110-3, XP012076712
PURVIS G.: "Changing the crystal face of gallium nitride", III-VS REVIEW, vol. 18, no. 8, 2005, pages 26 - 28, XP005159213
MASUI H. ET AL.: "Polarized Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate", JAP. J. OF APPL. PHYS., vol. 44, no. 43, 2005, pages L1329 - L1332, XP001502503
FUNATO M. ET AL.: "Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar [1122[ GaN Bulk Substrates", JAP. J. OF APPL. PHYS., vol. 45, no. 26, July 2006 (2006-07-01), pages L659 - L662, XP001502532
OKAMOTO K. ET AL.: "Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals", JAP. J. OF APPL. PHYS., vol. 45, no. 45, November 2006 (2006-11-01), pages L1197 - L1199, XP003021792
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (Sun Mullion NBF Tower 21st Floor,6-12, Minamihommachi 2-chome,Chuo-ku, Osaka-shi, Osaka, JP)
Download PDF: