Title:
LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/119363
Kind Code:
A1
Abstract:
This light-emitting device is provided with: a wave guide-type light-emitting element (102) formed on a cladding layer (101); a core (104) formed on the cladding layer (101) and constituting a port (103) opposite to an output port of the light-emitting element (102); and a light absorption layer (105) formed on the core (104) in a state of being in contact therewith. The core (104) is composed of a group III-V compound semiconductor such as InP. The core (104) is composed of a group III-V compound semiconductor that can guide (transmit) light (laser beam) outputted from the light-emitting element (102). The light absorption layer (105) is composed of a group III-V compound semiconductor, such as InGaAs, having a refractive index higher than that of the core (104). The group III-V compound semiconductor having the higher refractive index has an absorption coefficient with respect to light transmitted through the core (104) (light emitted from the light-emitting element (102)).
Inventors:
MAEDA YOSHIHO (JP)
TAKEDA KOJI (JP)
FUJII TAKURO (JP)
SEGAWA TORU (JP)
MATSUO SHINJI (JP)
TAKEDA KOJI (JP)
FUJII TAKURO (JP)
SEGAWA TORU (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2021/047027
Publication Date:
June 29, 2023
Filing Date:
December 20, 2021
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/026; H01L31/12
Domestic Patent References:
| WO2020144752A1 | 2020-07-16 |
Foreign References:
| JP2011003591A | 2011-01-06 | |||
| JP2011249619A | 2011-12-08 | |||
| JP2001015775A | 2001-01-19 | |||
| JPH11154770A | 1999-06-08 | |||
| US7573928B1 | 2009-08-11 | |||
| CN112397619A | 2021-02-23 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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