LIGHT EMITTING DEVICES, LIGHT EMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICE

WIPO Patent Application WO/2022/172125

A1

Provided is a light emitting device having high heat resistance in the manufacturing process. Provided is a light emitting device having a second electrode on a first electrode with an EL layer sandwiched therebetween, wherein the EL layer has at least a light emitting layer, a first electron transport layer, a second electron transport layer, and an electron injection layer, the first electron transport layer is provided on the light emitting layer, the second electron transport layer is provided on the first electron transport layer, an insulating layer is provided in contact with a side surface of the light emitting layer, a side surface of the first electron transport layer, and a side surface of the second electron transport layer, the electron injection layer is provided on the second electron transport layer, the insulating layer is located between the electron injection layer and the side surface of the light emitting layer, the side surface of the first electron transport layer, and the side surface of the second electron transport layer, and the second electron transport layer has a heteroaromatic compound having at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.

YOSHIYASU YUI (JP)
HASHIMOTO NAOAKI (JP)
TAKAHASHI TATSUYOSHI (JP)
KAWAKAMI SACHIKO (JP)
SEO SATOSHI (JP)

PCT/IB2022/050842

August 18, 2022

February 01, 2022

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SEMICONDUCTOR ENERGY LAB (JP)

H05B33/22; H01L51/50; H05B33/12

WO2020004086A1

2020-01-02

US20200161383A1	2020-05-21
JP2007525023A	2007-08-30
KR20150038800A	2015-04-09
CN109509765A	2019-03-22

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