Title:
LIGHT-EMITTING DIODE CHIP
Document Type and Number:
WIPO Patent Application WO/2022/222042
Kind Code:
A1
Abstract:
The present application discloses a light-emitting diode chip. The light-emitting diode chip comprises a semiconductor stack layer and an insulating layer; the insulating layer at least comprises a first insulating layer and a second insulating layer; the insulating layer has a step structure, the step structure comprises a first step formed by the first insulating layer and a second step formed by the second insulating layer, and in a horizontal direction, the first step exceeds the second step. In the present application, the insulating layer is formed at least by the first insulating layer and the second insulating layer, which can avoid cracking or whole-layer breaking of the insulating layer and improve the reliability of the insulating layer. Moreover, in the horizontal direction, the first insulating layer exceeds the second insulating layer by a predetermined length, and the exceeding part can yield a cushioning effect when a second structural layer is subsequently formed on the insulating layer, so as to reduce stress generated inside the second structural layer, avoid cracking or whole-layer breaking of the second structural layer under the action of the stress, and improve the reliability of the light-emitting diode chip.
Inventors:
HUANG MIN (CN)
LIU XIAOLIANG (CN)
HE ANHE (CN)
LIU XIAOLIANG (CN)
HE ANHE (CN)
Application Number:
PCT/CN2021/088496
Publication Date:
October 27, 2022
Filing Date:
April 20, 2021
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/14
Foreign References:
| CN102751410A | 2012-10-24 | |||
| CN110168755A | 2019-08-23 | |||
| CN107579081A | 2018-01-12 |
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