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Title:
LIGHT EMITTING DIODE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2015/146069
Kind Code:
A1
Abstract:
Provided is a light emitting diode element whereby high qualities can be obtained by suppressing luminous efficiency deterioration even if a lamination surface of a GaN substrate is a C plane. A light emitting diode element (10) is provided with: a GaN substrate (20) having a C plane as a lamination surface; an n-type GaN layer (30), which is laminated on the GaN substrate (20), and which is configured from a first n-type GaN layer (31), an n-type intermediate layer (32), and a second n-type GaN layer (33); and an AlGaN distortion adjustment layer (40) laminated on the n-type GaN layer (30). Furthermore, the light emitting diode element is provided with: a light emitting layer (50), which is laminated on the AlGaN distortion adjustment layer (40), and which has a multi-quantum well structure having well layers (51) and barrier layers (52), which are formed of InGaN having a lattice constant in the a-axis direction larger than that of the AlGaN distortion adjustment layer (40); and a p-type AlGaN cladding layer (60) that is laminated on the light emitting layer (50). The AlGaN distortion adjustment layer (40) is formed to have a layer thickness of 2-10 nm, and the light emitting layer (50) has the six well layers (51) laminated therein.

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Inventors:
HASEGAWA YOSHIAKI
TANJI YUSUKE
FUKUHISA TOSHIYA
MICHIMORI MASANORI
SAIGOU MASAYASU
KUNOH YASUMITSU
KUME MASAHIRO
KAWAGUCHI YASUTOSHI
KANO TAKASHI
Application Number:
PCT/JP2015/001467
Publication Date:
October 01, 2015
Filing Date:
March 17, 2015
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L33/32; H01L33/16
Foreign References:
JP2008227540A2008-09-25
JP2007184352A2007-07-19
JP2013243400A2013-12-05
JP2010147117A2010-07-01
JP2011211097A2011-10-20
JP2013183032A2013-09-12
Attorney, Agent or Firm:
FUJII, Kentaro et al. (JP)
Fujii Kentaro (JP)
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