LIGHT-EMITTING DIODE HAVING ZINC OXIDE LAYER AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2020/022684

A1

A light-emitting diode having a zinc oxide layer and a method for manufacturing same are disclosed. A light-emitting diode according to one embodiment comprises: a light-emitting structure including a gallium nitride-based first conductive semiconductor layer, a gallium nitride-based second conductive semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer positioned on the second conductive semiconductor layer, wherein: the ZnO transparent electrode layer comprises a ZnO seed layer, and a ZnO bulk layer formed on the ZnO seed layer; the ZnO bulk layer is porous in comparison with the ZnO seed layer; and the interface between the ZnO seed layer and the second conductive semiconductor layer is flatter than the interface between the ZnO seed layer and the ZnO bulk layer, and the interface between the ZnO seed layer and the ZnO bulk layer has an irregular, uneven form.

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LEE SEOM GEUN (KR)
SHIN CHAN SEOB (KR)

PCT/KR2019/008738

January 30, 2020

July 16, 2019

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SEOUL VIOSYS CO LTD (KR)

H01L33/42; H01L27/15; H01L33/00; H01L33/22; H01L33/38; H01L33/44

KR101256757B1	2013-04-23
KR20170040112A	2017-04-12
KR20100047795A	2010-05-10
JP2011082479A	2011-04-21
KR101296265B1	2013-08-14

AIP PATENT & LAW FIRM (KR)

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