Title:
LIGHT EMITTING DIODE INCLUDING ZINC OXIDE LAYER
Document Type and Number:
WIPO Patent Application WO/2018/208015
Kind Code:
A1
Abstract:
A light emitting diode according to embodiments of the present invention comprises: a plurality of light emitting cells which are arranged on a substrate and include active layers interposed between first conductivity type semiconductor layers and second conductivity type semiconductor layers, respectively; ZnO transparent electrodes arranged on the second conductivity type semiconductor layers of the light emitting cells, respectively; first contact electrodes in electrical contact with the first conductivity type semiconductor layers of the light emitting cells, respectively; second contact electrodes in electrical contact with the ZnO transparent electrodes, respectively; first pad electrodes electrically connected to some of the first contact electrodes; and second pad electrodes electrically connected to some of the second contact electrodes, wherein each of the light emitting cells has at least one through hole which extends through the second conductivity type semiconductor layer and the active layer to expose the first conductivity type semiconductor layer, and the active layers have the same light generating region.
Inventors:
LEE SEOM GEUN (KR)
LEE JIN WOONG (KR)
YANG MYOUNG HAK (KR)
SHIN CHAN SEOB (KR)
LEE JIN WOONG (KR)
YANG MYOUNG HAK (KR)
SHIN CHAN SEOB (KR)
Application Number:
PCT/KR2018/004050
Publication Date:
November 15, 2018
Filing Date:
April 06, 2018
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L27/15
Foreign References:
| KR20160079480A | 2016-07-06 | |||
| KR20130006808A | 2013-01-18 | |||
| KR20080085343A | 2008-09-24 | |||
| KR20110093248A | 2011-08-18 | |||
| KR20160143431A | 2016-12-14 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
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