LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR, AND LIGHT-EMITTING APPARATUS

WIPO Patent Application WO/2021/004469

A1

Provided is a light-emitting diode, comprising a first electrode, a light-emitting functional layer and a second electrode that are provided in a stacked manner, wherein the first electrode is a transparent electrode; the second electrode comprises a metal electrode layer and a semiconductor auxiliary layer; the metal electrode layer is attached to the light-emitting functional layer; and the semiconductor auxiliary layer is arranged on the surface of one side, facing away from the light-emitting functional layer, of the metal electrode layer. The metal electrode layer is made of a magnesium-silver alloy, and the thickness of the metal electrode layer is between 3 nm and 5 nm. The semiconductor auxiliary layer is made of IZO, and the thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm. Further provided are a light-emitting apparatus and a manufacturing method for a light-emitting diode. The light-emitting diode has a high color rendering index and low energy consumption.

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WO/2014/049993	DISPLAY UNIT AND ELECTRONIC APPARATUS
JP2012178600	MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

WANG LINLIN (CN)
YOU JUANJUAN (CN)

PCT/CN2020/100785

January 14, 2021

July 08, 2020

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BOE TECHNOLOGY GROUP CO LTD (CN)

H01L51/52

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TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)

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