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Title:
LIGHT EMITTING DIODE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/010997
Kind Code:
A1
Abstract:
A light emitting diode, comprising a base and a top electrode which are provided opposite to each other, the base comprising a substrate and a bottom electrode provided on the substrate, a light emitting layer (5) being provided between the bottom electrode and the top electrode, the light emitting diode further comprising a graphene layer for anchoring adjacent functional layers, and the surface of the graphene layer being modified with a first active functional group; the base is a groove base, the bottom electrode is a first graphene electrode, the graphene layer is a patterned graphene layer provided between the bottom electrode and the light emitting layer (5), and the first active functional group is modified on the surface of the graphene layer facing towards the light emitting layer (5); or the light emitting diode is a quantum-dot light-emitting diode device, the light emitting layer (5) is a quantum-dot light-emitting layer, the graphene layer is a graphene pixel array provided between the quantum-dot light-emitting layer (5) and the bottom electrode, and the quantum-dot light-emitting layer (5) is combined with the graphene pixel array by means of the first active functional group.

Inventors:
CAO WEIRAN (CN)
LIANG ZHURONG (CN)
LIU JIA (CN)
Application Number:
PCT/CN2018/079467
Publication Date:
January 17, 2019
Filing Date:
March 19, 2018
Export Citation:
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Assignee:
TCL CORP (CN)
International Classes:
H01L33/40; H01L33/00
Domestic Patent References:
WO2016153228A12016-09-29
Foreign References:
CN103441221A2013-12-11
CN105957939A2016-09-21
CN103474425A2013-12-25
CN104091892A2014-10-08
US20140087501A12014-03-27
CN105489767A2016-04-13
Attorney, Agent or Firm:
SHENZHEN ZHONGYI PATENT AND TRADEMARK OFFICE (CN)
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