Title:
LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
Document Type and Number:
WIPO Patent Application WO/2014/092448
Kind Code:
A1
Abstract:
According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
Inventors:
LEE JIN WOONG (KR)
KIM KYOUNG WAN (KR)
YOON YEO JIN (KR)
KIM YE SEUL (KR)
KIM KYOUNG WAN (KR)
YOON YEO JIN (KR)
KIM YE SEUL (KR)
Application Number:
PCT/KR2013/011459
Publication Date:
June 19, 2014
Filing Date:
December 11, 2013
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/36; H01L33/46
Foreign References:
| JP2008034821A | 2008-02-14 | |||
| JP2012124306A | 2012-06-28 | |||
| KR20120018571A | 2012-03-05 | |||
| JP2004128321A | 2004-04-22 | |||
| US20110278631A1 | 2011-11-17 |
Attorney, Agent or Firm:
HONESTY & JR PARTNERS INTELLECTUAL PROPERTY LAW GROUP (KR)
특허법인 정안 (KR)
특허법인 정안 (KR)
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