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Title:
LIGHT EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2016/036067
Kind Code:
A1
Abstract:
A light emitting diode is disclosed. The light emitting diode includes: a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer; a current blocking unit disposed on one region of the second conductive-type semiconductor layer and including a through-hole formed in a thickness direction thereof; a transparent electrode covering at least a portion of an upper surface of the second conductive-type semiconductor layer and the current blocking unit, and including an opening exposing the through-hole; and a second electrode contacting the second conductive-type semiconductor layer through the through-hole and disposed on the current blocking unit, wherein the transparent electrode includes a first transparent electrode and a second transparent electrode disposed on the first transparent electrode and having a smaller area than the first transparent electrode, and the second electrode forms ohmic contact with side surfaces of the first and second transparent electrodes.

Inventors:
YOON YEO JIN (KR)
Application Number:
PCT/KR2015/009068
Publication Date:
March 10, 2016
Filing Date:
August 28, 2015
Export Citation:
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Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/42
Foreign References:
KR20120037636A2012-04-20
US20080241526A12008-10-02
KR20140086185A2014-07-08
JP2005183592A2005-07-07
KR20080033721A2008-04-17
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (Teheran-ro 14-gilGangnam-gu, Seoul, KR)
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