LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2011/071077

A1

Disclosed is a semiconductor light emitting element having a high emission intensity. The semiconductor light emitting element has the multilayer structure wherein a first conductivity type layer and a second conductivity type layer are provided with a light emitting layer therebetween. The second conductivity type layer is partitioned into two parts, i.e., a small part and a large part, by means of a trench structure that forms the exposed portion of the first conductivity type layer, and the semiconductor light emitting element has a second conductivity type electrode pad on the large second conductivity type layer thus partitioned, and a first conductivity type electrode pad on the small second conductivity type layer thus partitioned. The first conductivity type electrode pad is, by means of two or more conductive wiring lines, electrically in contact with two or more areas that are independently provided on the exposed portion of the first conductivity type layer, said conductive wiring lines being independently in contact with the exposed first conductivity type layer by having the first conductivity type electrode pad as a start point.

TOYOTA TATSUNORI (JP)
OHTA YUTAKA (JP)

PCT/JP2010/072018

June 16, 2011

December 08, 2010

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DOWA ELECTRONICS MATERIALS CO (JP)
TOYOTA TATSUNORI (JP)
OHTA YUTAKA (JP)

H01L33/38; H01L33/32

WO2008038842A1

2008-04-03

JP2001308380A	2001-11-02
JP2003110139A	2003-04-11
JPH10223930A	1998-08-21
JP2002319704A	2002-10-31
JP2009094089A	2009-04-30
JP2008277358A	2008-11-13

ANIYA Setuo et al. (JP)
Ani store Setsuo (JP)

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