LIGHT EMITTING ELEMENT PRODUCING METHOD AND LIGHT EMITTING ELEMENT

WIPO Patent Application WO/2010/098163

A1

Disclosed is a light emitting element producing method wherein a light emitting element for a group-III to V compound semiconductor having a quantum well structure containing In and N is produced. The light emitting element producing method is comprised of a step of forming a well layer (13a) containing In and N; a step of forming a barrier layer (13b), the band gap of which is wider than that of the well layer (13a); and a step of interrupting an epitaxial growth by supplying gas containing N between the step of forming the well layer (13a) and the step of forming the barrier layer (13b). In the interrupting step, gas having a degradation efficiency higher than the degradation efficiency obtained when N2 and NH3 are degraded to active nitrogen at 900°C is supplied. Further, in the interrupting step, gas different from a supply source which supplies N of the well layer (13a) is supplied.

YOSHIZUMI YUSUKE (JP)
UENO MASAKI (JP)
NAKAMURA TAKAO (JP)
UEDA TOSHIO (JP)
TAKASUKA EIRYOU (JP)
SENDA YASUHIKO (JP)

PCT/JP2010/051029

September 02, 2010

January 27, 2010

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SUMITOMO ELECTRIC INDUSTRIES (JP)
YOSHIZUMI YUSUKE (JP)
UENO MASAKI (JP)
NAKAMURA TAKAO (JP)
UEDA TOSHIO (JP)
TAKASUKA EIRYOU (JP)
SENDA YASUHIKO (JP)

H01L21/205; H01L33/32; H01S5/343

JP2008028121A	2008-02-07
JP2001015808A	2001-01-19
JP2008078186A	2008-04-03
JP2003007617A	2003-01-10
JPH09186091A	1997-07-15
JP2000082676A	2000-03-21
JP2001077415A	2001-03-23
JP2008211261A	2008-09-11
JP2008244074A	2008-10-09
JP2007324546A	2007-12-13

See also references of EP 2403023A4

FUKAMI, Hisao et al. (JP)
Hisao Fukami (JP)

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