LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD FOR LIGHT-EMITTING ELEMENT

Title:

LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD FOR LIGHT-EMITTING ELEMENT

Document Type and Number:

WIPO Patent Application WO/2016/125833

Kind Code:

A1

Abstract:

Provided are a light-emitting element and a production method for the light-emitting element, whereby external quantum efficiency and optical output can be increased as a result of controlling dopand concentration in the vicinity of the interface between a light-emitting layer area and a carrier block layer. A light-emitting element 1 for a nitride semiconductor comprises: a first conduction-type first semiconductor layer 20; a second semiconductor layer 50 of a second conduction type that is different from the first conduction type; a carrier block layer 40 of the second conduction type, provided on the first semiconductor layer 20 side of the second semiconductor layer 50; and a light-emitting layer area 30 having a light-emitting layer and being between the first semiconductor layer 20 and the carrier block layer 40. The maximum second conduction type impurity concentration in a predetermined area from the interface with the light-emitting layer area 30 inside the carrier block layer 40 is higher than 5 × 1019 cm-3.

Inventors:

OBATA TOSHIYUKI (JP)

Application Number:

PCT/JP2016/053257

Publication Date:

August 11, 2016

Filing Date:

February 03, 2016

Export Citation:

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Assignee:

TOKUYAMA CORP (JP)

International Classes:

H01L33/14; H01L33/32

Foreign References:

JP2011211076A	2011-10-20
JP2000040858A	2000-02-08
JPH11340580A	1999-12-10
JP2014154597A	2014-08-25

Other References: