Title:
LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/018017
Kind Code:
A1
Abstract:
This light emitting element is provided with: a layered structure 20 formed by layering a first compound semiconductor layer 21 made of a GaN-based compound semiconductor, an active layer 23, and a second compound semiconductor layer 22; a mode loss effective site 54 provided on the second compound semiconductor layer 22 and forming a mode loss effective region 55 having an effect on increase/decrease in oscillation mode loss; a second electrode 32; a second light reflecting layer 42; a first light reflecting layer 41; and a first electrode 31. In the layered structure 20, a current injected region 51, a no-current injected inner region 52 surrounding the current injected region 51, and a no-current injected outer region 53 surrounding the no-current injected inner region 52 are formed. The projection image of the mode loss effective region 55 overlaps the projection image of the no-current injected outer region 53.
Inventors:
HAMAGUCHI TATSUSHI (JP)
IZUMI SHOICHIRO (JP)
TAKIGUCHI YOSHIRO (JP)
FUTAGAWA NORIYUKI (JP)
IZUMI SHOICHIRO (JP)
TAKIGUCHI YOSHIRO (JP)
FUTAGAWA NORIYUKI (JP)
Application Number:
PCT/JP2016/063944
Publication Date:
February 02, 2017
Filing Date:
May 11, 2016
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01S5/183
Foreign References:
| JP2015035543A | 2015-02-19 | |||
| JPH0927650A | 1997-01-28 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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