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Patent Searching and Data


Title:
LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/153384
Kind Code:
A1
Abstract:
A light-emitting element (1) is provided with: a cathode (6); an anode (2) disposed opposite the cathode (6); a light-emitting layer (4) between the cathode (6) and the anode (2); and, between the cathode (6) and the light-emitting layer (4), an electron transport layer (5) containing a compound containing a group IIB (12) element, a group IVB (14) element, and elemental nitrogen, or a compound containing a group IVB (14) element, a group VIB (16) element, and elemental boron.

Inventors:
UETA YOSHIHIRO
Application Number:
PCT/JP2021/000800
Publication Date:
July 21, 2022
Filing Date:
January 13, 2021
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
H01L51/50; H05B33/22
Foreign References:
US20200295226A12020-09-17
US20200227663A12020-07-16
US20200035857A12020-01-30
CN106654026A2017-05-10
Other References:
LYU, SAI ET AL.: "Band alignment of III-N, ZnO and II-IV-N2 semiconductors from the electron affinity rule", JOURNAL OF PHYSICS D: APPLIED PHYSICS, vol. 53, no. 1, 18 October 2019 (2019-10-18), pages 015111, XP020348289, DOI: 10.1088/1361-6463/ab4baa
GOGOVA, D. ET AL.: "High electron mobility single- crystalline ZnSnN2 on ZnO (0001) substrates", CRYSTENGCOMM, vol. 22, no. 38, 10 August 2020 (2020-08-10), pages 6268 - 6274, XP081699018
WU, XIAOJIE ET AL.: "Carrier Tuning in ZnSnN2 by Forming Amorphous and Microcrystalline Phases", INORG. CHEM ., vol. 58, no. 13, 20 June 2019 (2019-06-20), pages 8480 - 8485, XP055955556
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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