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Patent Searching and Data


Title:
LIGHT EMITTING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2011/146299
Kind Code:
A3
Abstract:
A film can include a plurality of semiconductor nanocrystals and a J-aggregating material in solution. The film can exhibit 90% energy transfer efficiency from the J- aggregating material to the plurality of semiconductor nanocrystals. The film can exhibit photoluminescence that is enhanced at least 2.5 times over an equivalent film including the plurality of semiconductor nanocrystals alone when excited at 465 nm. The film can be contacted onto a substrate by spin casting.

Inventors:
WALKER BRIAN J (US)
BAWENDI MOUNGI G (US)
BULOVIC VLADIMIR (US)
Application Number:
PCT/US2011/036113
Publication Date:
March 29, 2012
Filing Date:
May 11, 2011
Export Citation:
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Assignee:
MASSACHUSETTS INST TECHNOLOGY (US)
WALKER BRIAN J (US)
BAWENDI MOUNGI G (US)
BULOVIC VLADIMIR (US)
International Classes:
H05B33/00
Other References:
J.E. HALPERT ET AL.: "Electrostatic formation of quantum dot/J-aggregate FRE T pairs in solution", J. PHYS. CHEM., vol. 113, 27 January 2009 (2009-01-27), pages 9986 - 9992
B.J.WALKER: "Narrow-band absorption enhanced quantum dot/J-aggregate conjuga tes", J. AM. CHEM. SOC., vol. 131, 23 June 2009 (2009-06-23), pages 9624 - 9625
Y. AMAO ET AL.: "Near IR light sensitized voltaic conversion system us ing nanocrystalline Ti02 film by Zn chlorophyll derivative aggregate", LANGM UIR, vol. 21, 2 March 2005 (2005-03-02), pages 3008 - 3012
Attorney, Agent or Firm:
FOX, Harold H. et al. (1330 Connecticut Avenue N, Washington DC, US)
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