LIGHT EMITTING TRANSISTOR

WIPO Patent Application WO/2011/099525

A1

Provided is an organic light emitting transistor that has excellent light emitting intensity, degree of making the width of the wavelength of a spectrum of light narrower, reproducibility thereof, and element stability, and wherein the light emitting intensity and the degree of making the width of the wavelength of a spectrum of light narrower can be controlled easily, and with good reproducibility. The light emitting transistor, which comprises a light emitting layer, a drain electrode and a source electrode electrically connected to the light emitting layer, and a gate electrode connected to the light emitting layer with an insulator layer interposed therebetween, and wherein the light emitting layer is made of organic semiconductor material and has a periodic structure, and the gate electrode has an alternate current applied thereto, has excellent light emitting intensity, degree of making the width of the wavelength of a spectrum of light narrower, reproducibility thereof, and element stability, and is able to easily control the light emitting intensity and the degree of making the width of the wavelength of a spectrum of light narrower, with good reproducibility.

YAMAO TAKESHI (JP)
HOTTA SHU (JP)
SAKURAI YOICHI (JP)
MAKINO YOSHITAKA (JP)
TERASAKI KOHEI (JP)
OKADA AKINORI (JP)

PCT/JP2011/052760

August 18, 2011

February 09, 2011

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NAT UNIV CORP KYOTO INST TECH (JP)
YAMAO TAKESHI (JP)
HOTTA SHU (JP)
SAKURAI YOICHI (JP)
MAKINO YOSHITAKA (JP)
TERASAKI KOHEI (JP)
OKADA AKINORI (JP)

H05B33/02; H01L21/336; H01L29/786; H01L51/05; H01L51/50

WO2009099205A1	2009-08-13
WO2005079119A1	2005-08-25

JP2009140913A

2009-06-25

TANAKA, Mitsuo et al. (JP)
Mitsuo Tanaka (JP)

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