Title:
LIGHT EXPOSURE METHOD, METHOD FOR PRODUCING DEPOSITION MASK, LIGHT EXPOSURE APPARATUS, AND DEPOSITION MASK
Document Type and Number:
WIPO Patent Application WO/2023/204295
Kind Code:
A1
Abstract:
This light exposure method is a method for exposing a first resist layer located on a deposition mask base material to light. In the first resist layer, a region used for the formation of a single deposition mask by etching is a unit mask region. The unit mask region includes a plurality of unit light exposure regions. The light exposure method comprises exposing all unit light exposure regions included in the plurality of unit light exposure regions to light. The procedure for exposing to light includes: exposing a first unit light exposure region included in the plurality of unit light exposure regions to light; and exposing a second unit light exposure region included in the plurality of unit light exposure regions to light at a timing different from that for the first unit light exposure region.
Inventors:
YUKINO TATSUYA (JP)
USUI KAZUMA (JP)
KUBO YOSHIKATSU (JP)
SUZUKI MITSURU (JP)
KOBAYASHI AKIHIKO (JP)
USUI KAZUMA (JP)
KUBO YOSHIKATSU (JP)
SUZUKI MITSURU (JP)
KOBAYASHI AKIHIKO (JP)
Application Number:
PCT/JP2023/015881
Publication Date:
October 26, 2023
Filing Date:
April 21, 2023
Export Citation:
Assignee:
TOPPAN INC (JP)
International Classes:
C23C14/04; G03F7/20
Foreign References:
| JP2020152939A | 2020-09-24 | |||
| JP2010196091A | 2010-09-09 | |||
| JP2020056109A | 2020-04-09 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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