Title:
LIGHT INTENSITY DISTRIBUTION SIMULATION METHOD FOR THICK PHOTORESIST LITHOGRAPHY PROCESS
Document Type and Number:
WIPO Patent Application WO/2023/216336
Kind Code:
A1
Abstract:
A light intensity distribution simulation method for a thick photoresist lithography process, the method comprising the following steps: constructing a corresponding model in an FDTD according to an actual contact/proximity photolithograph condition, and applying a plane wave, the incident angle, the polarization direction and the wavelength of which can be controlled; processing a dispersive medium by using a recursive convolution method; adding a convolutional perfectly matched layer (CPML) boundary to a simulation area; performing cyclic calculations, and updating the electric field and the magnetic field of each Yee lattice point within each time step until a steady state is achieved; and obtaining a light intensity distribution inside a photoresist according to the distribution of electric fields and magnetic fields in a lattice and by using a peak detection method. The problem of lacking a high-precision simulation model for a thick photoresist lithography process at present is solved, and the method is highly flexible, and is suitable for simulation of a complex photolithograph condition.
Inventors:
ZHOU ZAIFA (CN)
GUO KAIQI (CN)
HUANG QINGAN (CN)
GUO KAIQI (CN)
HUANG QINGAN (CN)
Application Number:
PCT/CN2022/095558
Publication Date:
November 16, 2023
Filing Date:
May 27, 2022
Export Citation:
Assignee:
UNIV SOUTHEAST (CN)
International Classes:
G03F7/20; G06F30/20
Foreign References:
| CN112558428A | 2021-03-26 | |||
| CN112363372A | 2021-02-12 | |||
| CN110824831A | 2020-02-21 | |||
| CN112307639A | 2021-02-02 | |||
| CN107290931A | 2017-10-24 | |||
| CN114326287A | 2022-04-12 | |||
| US20090210851A1 | 2009-08-20 |
Attorney, Agent or Firm:
NANJING RUIHONG PATENT & TRADEMARK AGENCY (ORDINARY PARTNERSHIP) (CN)
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