Title:
LIGHT RECEIVING DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/202983
Kind Code:
A3
Abstract:
A photovoltaic device having an active region comprising a III-V material including Bismuth and one or more other group V elements, the band gap energy of the material is in the range of from 0.4 to 1.4 eV and the spin-orbit splitting energy of the material is in the range of from 0.3 to 0.8 eV.
Inventors:
SWEENEY STEPHEN (GB)
HILD KONSTANZE (GB)
HILD KONSTANZE (GB)
Application Number:
PCT/GB2014/051879
Publication Date:
March 19, 2015
Filing Date:
June 19, 2014
Export Citation:
Assignee:
UNIV SURREY (GB)
International Classes:
H01L31/0304; H01L31/0687; H01L31/075; H01L31/076; H01L31/105; H01L31/18
Foreign References:
| US20020117675A1 | 2002-08-29 |
Other References:
HUNTER C J ET AL: "Absorption Characteristics of GaAs(1-x)Bi(x)/GaAs Diodes in the Near-Infrared", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 24, no. 23, December 2012 (2012-12-01), pages 2191 - 2194, XP011488551, ISSN: 1041-1135, DOI: 10.1109/LPT.2012.2225420
SWEENEY STEPHEN JOHN ET AL: "The potential of GaAsBiN for multi-junction solar cells", 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE, 20 June 2013 (2013-06-20), pages 2474 - 2478, XP032568294, DOI: 10.1109/PVSC.2013.6744977
SWEENEY S J ET AL: "Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 113, no. 4, 28 January 2013 (2013-01-28), pages 43110 - 43110, XP012169657, ISSN: 0021-8979, [retrieved on 20130129], DOI: 10.1063/1.4789624
T. J. C. HOSEA ET AL: "InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content", 2012 IEEE 3RD INTERNATIONAL CONFERENCE ON PHOTONICS, October 2012 (2012-10-01), pages 154 - 158, XP055145510, ISBN: 978-1-46-731462-6, DOI: 10.1109/ICP.2012.6379872
KUDRAWIEC R ET AL: "Contactless electroreflectance study of E(0) and E(0)+Delta(SO) transitions in InGaBiAsalloys", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 99, no. 25, 19 December 2011 (2011-12-19), pages 251906 - 251906, XP012152779, ISSN: 0003-6951, [retrieved on 20111221], DOI: 10.1063/1.3669703
SWEENEY STEPHEN JOHN ET AL: "The potential of GaAsBiN for multi-junction solar cells", 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE, 20 June 2013 (2013-06-20), pages 2474 - 2478, XP032568294, DOI: 10.1109/PVSC.2013.6744977
SWEENEY S J ET AL: "Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 113, no. 4, 28 January 2013 (2013-01-28), pages 43110 - 43110, XP012169657, ISSN: 0021-8979, [retrieved on 20130129], DOI: 10.1063/1.4789624
T. J. C. HOSEA ET AL: "InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content", 2012 IEEE 3RD INTERNATIONAL CONFERENCE ON PHOTONICS, October 2012 (2012-10-01), pages 154 - 158, XP055145510, ISBN: 978-1-46-731462-6, DOI: 10.1109/ICP.2012.6379872
KUDRAWIEC R ET AL: "Contactless electroreflectance study of E(0) and E(0)+Delta(SO) transitions in InGaBiAsalloys", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 99, no. 25, 19 December 2011 (2011-12-19), pages 251906 - 251906, XP012152779, ISSN: 0003-6951, [retrieved on 20111221], DOI: 10.1063/1.3669703
Attorney, Agent or Firm:
TAOR, Simon et al. (200 Aldersgate, London EC1A 4HD, GB)
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