Title:
LIGHT RECEIVING ELEMENT, OPTICAL COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/199501
Kind Code:
A1
Abstract:
A light receiving element (1) according to an embodiment of the present disclosure is provided with a semiconductor layer (20) in which a PIN structure photodiode comprising a first conductivity type layer (21), a light absorption layer (23), and a second conductivity type layer (24) with a light incident surface is formed in a columnar mesa portion. In the light receiving element (1), the semiconductor layer (20) includes, in the first conductivity type layer (21) in the vicinity of an interface between the first conductivity type layer (21) and the light absorption layer (23) , a constricted portion (26) that is the most constricted portion of the first conductivity type layer (21). An edge of the interface is exposed on an inner surface of the constricted portion (26).
Inventors:
MASUI YUJI (JP)
KANEKO SHINGO (JP)
KANEKO SHINGO (JP)
Application Number:
PCT/JP2017/006257
Publication Date:
November 23, 2017
Filing Date:
February 21, 2017
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L31/10
Foreign References:
| JP2002289905A | 2002-10-04 | |||
| JP2003046110A | 2003-02-14 | |||
| JP2008244368A | 2008-10-09 | |||
| JP2005260118A | 2005-09-22 | |||
| US20030194827A1 | 2003-10-16 |
Other References:
SHI JIN-WEI ET AL.: "GaAs/In0.5 Ga0. 5P Laser Power Converter With Undercut Mesa for Simultaneous High-Speed Data Detection and DC Electrical Power Generation", IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 4, April 2012 (2012-04-01), pages 561 - 563, XP011437259, DOI: doi:10.1109/LED.2011.2181970
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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