Title:
LIGHT-TRANSMISSIVE CONDUCTIVE FILM AND MANUFACTURING METHOD FOR ANNEALED LIGHT-TRANSMISSIVE CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2017/057556
Kind Code:
A1
Abstract:
Provided is a light-transmissive conductive film that can have a low resistance value even if the light-transmissive conductive film is subjected to annealing in a short time. The light-transmissive conductive film according to the present invention is provided with: a conductive layer having light transmission property and conductivity; and a substrate disposed on one surface side of the conductive layer. The conductive layer is an amorphous layer of an indium tin oxide. Of the total content 100 wt% of In atoms and Sn atoms in the conductive layer, the content of Sn atoms is 7 wt% or more. The carrier density in the conductive layer is 4×1020/cm3 to 6×1020/cm3. The hole mobility in the conductive layer is 20cm2/V·s to 28cm2/V·s.
Inventors:
KOYAMA TAKEFUMI (JP)
MASUZAWA KENJI (JP)
MURAKAMI JUNNOSUKE (JP)
FUKUDA TAKASHI (JP)
MASUZAWA KENJI (JP)
MURAKAMI JUNNOSUKE (JP)
FUKUDA TAKASHI (JP)
Application Number:
PCT/JP2016/078794
Publication Date:
April 06, 2017
Filing Date:
September 29, 2016
Export Citation:
Assignee:
SEKISUI CHEMICAL CO LTD (JP)
International Classes:
H01B5/14; B32B7/02; B32B9/00; C23C14/08; C23C14/34; H01B13/00; C23C14/35
Domestic Patent References:
WO2013172055A1 | 2013-11-21 | |||
WO2014034575A1 | 2014-03-06 | |||
WO2014157312A1 | 2014-10-02 | |||
WO2011043235A1 | 2011-04-14 |
Foreign References:
JPH09286070A | 1997-11-04 | |||
JP2004207221A | 2004-07-22 | |||
JP2004247060A | 2004-09-02 | |||
JP2013152827A | 2013-08-08 | |||
JP2013229283A | 2013-11-07 | |||
JP2014148734A | 2014-08-21 |
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
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