Title:
I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE
Document Type and Number:
WIPO Patent Application WO/2017/039235
Kind Code:
A1
Abstract:
The present invention relates to an I-line negative type photoresist composition having excellent etching resistance. More specifically, the purpose of the present invention is to provide an I-line negative type photoresist composition, which is suitable to be applied to a semiconductor process and shows excellent etching resistance compared with an existing I-line negative type photoresist.
Inventors:
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
YOON SANG WOONG (KR)
CHOI YOUNG CHEOL (KR)
LEE SEUNG HYUN (KR)
YOON SANG WOONG (KR)
CHOI YOUNG CHEOL (KR)
Application Number:
PCT/KR2016/009494
Publication Date:
March 09, 2017
Filing Date:
August 26, 2016
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
G03F7/004; G03F7/038
Foreign References:
| KR20110022227A | 2011-03-07 | |||
| KR20080089785A | 2008-10-08 | |||
| KR20080053455A | 2008-06-13 | |||
| KR20010021256A | 2001-03-15 | |||
| KR20000058082A | 2000-09-25 |
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
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