LITHOGRAPHIC RESIST UNDERLAYER FILM-FORMING COMPOUND THAT COMPRISES RESIN INCLUDING POLYETHER STRUCTURE

WIPO Patent Application WO/2012/050064

A1

[Problem] To provide a resist underlayer film-forming compound for forming a resist underlayer that has heat resistance properties and hard-mask characteristics. [Solution] A lithographic resist underlayer film-forming compound that comprises a polymer including a unit structure represented by formula (1) (where Ar1 represents an organic group that includes a C6—C50 arylene group or heterocyclic group), a unit structure represented by formula (2) (where Ar2, Ar3, and Ar4 each represent an organic group that includes a C6—C50 arylene group or heterocyclic group, and T represents a carbonyl group or a sulfonyl group), or a combination of these unit structures. The arylene-group-containing organic groups Ar1 and Ar2 are organic groups that include a fluorene structure.

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OKUYAMA HIROAKI (JP)
SOMEYA YASUNOBU (JP)
KATO MASAKAZU (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)

PCT/JP2011/073233

April 19, 2012

October 07, 2011

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NISSAN CHEMICAL IND LTD (JP)
OKUYAMA HIROAKI (JP)
SOMEYA YASUNOBU (JP)
KATO MASAKAZU (JP)
SHINJO TETSUYA (JP)
HASHIMOTO KEISUKE (JP)

G03F7/11; C08G65/40; H01L21/027

JP2008015223A	2008-01-24
JP2006285046A	2006-10-19
JP2006152295A	2006-06-15
JP2011032475A	2011-02-17

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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