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Title:
LOAD DRIVE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/110141
Kind Code:
A1
Abstract:
Provided are a highly reliable load drive device and a failure diagnosing method therefor, the load drive device having a semiconductor chip mounted therein that uses deep trench isolation (DTI) for inter-element isolation, and being capable of diagnosing the dielectric withstand voltage of DTI. The load drive device with the semiconductor chip mounted therein is characterized in that the semiconductor chip is provided with a load drive output portion formed on a semiconductor substrate, wherein the load drive output portion comprises: a first area in which a MOSFET for load drive control is formed; a first leak current detection element which has a second area insulated and isolated from the first area by DTI and which is disposed in the first area; a second leak current detection element disposed in the second area; and a failure detection portion which determines failure of the load drive output portion.

Inventors:
KAWATA TAKAHIRO (JP)
KOBAYASHI YOICHIRO (JP)
WATANABE MITSUHIKO (JP)
Application Number:
PCT/JP2017/039863
Publication Date:
June 21, 2018
Filing Date:
November 06, 2017
Export Citation:
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Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H01L21/822; G01R31/26; H01L21/76; H01L21/762; H01L27/04; H02M7/48
Domestic Patent References:
WO2015053022A12015-04-16
Foreign References:
JP2016208329A2016-12-08
JP2016092338A2016-05-23
JP2002343855A2002-11-29
JP2007189096A2007-07-26
JPH0883830A1996-03-26
JP2014235060A2014-12-15
JP2006215454A2006-08-17
JP2008098346A2008-04-24
JP2009194791A2009-08-27
Attorney, Agent or Firm:
TODA Yuji (JP)
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