LOAD SENSOR USING VERTICAL TRANSISTOR

Title:

LOAD SENSOR USING VERTICAL TRANSISTOR

Document Type and Number:

WIPO Patent Application WO/2015/025480

Kind Code:

A1

Abstract:

A load sensor (100) is composed from a rib (2) and a vertical transistor using an organic semiconductor thin film (5), and the like, and load measurement is carried out on the basis of the variation of a channel length in the vertical transistor, that is, the space between the drain and source. As a result, a current (Ids) can be made to exhibit linear variation in relation to an applied load.

More Like This:

WO/2002/037073	MECHANICAL QUANTITY SENSOR ELEMENT, LOAD SENSOR ELEMENT, ACCELERATION SENSOR ELEMENT, AND PRESSURE SENSOR ELEMENT
WO/1997/024915	MICRO-ELECTRO-MECHANICS SYSTEMS (MEMS)
WO2000006983	FLEXIBLE SILICON STRAIN GAGE

Inventors:

INOUE TAKASHI (JP)
HATA KENSUKE (JP)
KATOH TETSUYA (JP)
SAKAI KENICHI (JP)
UNO MAYUMI (JP)
TAKEYA JUNICHI (JP)

Application Number:

PCT/JP2014/004000

Publication Date:

February 26, 2015

Filing Date:

July 30, 2014

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Assignee:

DENSO CORP (JP)

International Classes:

G01L1/18; H01L29/786; H01L29/84

Domestic Patent References:

WO2013118706A1

2013-08-15

Foreign References:

JP2009031045A	2009-02-12
JPH1144587A	1999-02-16
JP2013016778A	2013-01-24

Attorney, Agent or Firm:

KIN, Junhi (JP)
Gold Junki (JP)

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