LOGIC GATE BASED ON MAGNETIC TUNNEL JUNCTION STRUCTURE

WIPO Patent Application WO/2020/149624

A1

A logic gate based on a magnetic tunnel junction structure, according to one embodiment of the present invention, comprises: a single magnetic tunnel junction structure which has a tunneling barrier layer and a free layer laminated in order on a pinned layer, and has first and second magnetic fields and first and second voltages applied thereto; a first input element which applies the first and second magnetic fields; and a second input element which, when the magnetic fields are applied from the first input element, applies, as the first and second voltages, respective voltages selected from two regions among first to third operating voltage regions which are categorized on the basis of induction voltages for inducing a critical current necessary for the magnetization reversal of the free layer, wherein operation may be carried out under 14 logic modes depending on the magnetization state of the free layer with respect to the pinned layer according to combinations of applications of the first and second input elements.

JP3352366

[Title of Invention] Pulse signal generator

PARK WANJUN (KR)

PCT/KR2020/000706

July 23, 2020

January 15, 2020

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IUCF HYU (KR)

H03K3/45; H01L43/08; H03K19/20

KR20160121644A	2016-10-20
JP2015019374A	2015-01-29
KR20160051686A	2016-05-11
KR101474665B1	2014-12-19

JUNWOO LEE: "A research about constructing the universal MTJ logic gates which represent 16 binary Boolean logic operations and Full-adder built by cascading logic gates", MASTER THESIS, 31 August 2015 (2015-08-31), Korea, pages 1 - 70, XP009522564

PARK, Sangyoul (KR)

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