Title:
LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER
Document Type and Number:
WIPO Patent Application WO2001093387
Kind Code:
A3
Abstract:
Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 DEG C.
Inventors:
CHOQUETTE KENT D (US)
KLEM JOHN F (US)
KLEM JOHN F (US)
Application Number:
PCT/US2001/017548
Publication Date:
January 16, 2003
Filing Date:
May 31, 2001
Export Citation:
Assignee:
SANDIA CORP (US)
CHOQUETTE KENT D (US)
KLEM JOHN F (US)
CHOQUETTE KENT D (US)
KLEM JOHN F (US)
International Classes:
H01S5/183; H01S5/042; H01S5/30; H01S5/323; H01S5/343; (IPC1-7): H01S5/183
Domestic Patent References:
| WO1998007218A1 | 1998-02-19 |
Foreign References:
| EP0822630A1 | 1998-02-04 |
Other References:
LEAR K L ET AL: "High-frequency modulation of oxide-confined vertical cavity surface emitting lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 5, 29 February 1996 (1996-02-29), pages 457 - 458, XP006004839, ISSN: 0013-5194
OHNOKI N ET AL: "Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 195, no. 1-4, 15 December 1998 (1998-12-15), pages 603 - 608, XP004154324, ISSN: 0022-0248
OHNOKI N ET AL: "Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 195, no. 1-4, 15 December 1998 (1998-12-15), pages 603 - 608, XP004154324, ISSN: 0022-0248
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