Title:
LOW DEFECT DENSITY, THIN-LAYER, SOI SUBSTRATES
Document Type and Number:
WIPO Patent Application WO2002045132
Kind Code:
A9
Abstract:
Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the substrate in an atmosphere having a selected oxygen concentration to form an oxide surface layer. The oxidation is performed at a temperature and for a time duration such that the formation of the oxide layer causes the injection of a controlled number of atoms of the substrate from a region proximate to an interface between the newly formed oxide layer and the substrate into the upper regions of the substrate to reduce strain. A high temperature annealing step is then performed to produce the insulating layer within the precursor layer.
Inventors:
ANC MARIA J
DOLAN ROBERT P
DOLAN ROBERT P
Application Number:
PCT/US2001/044689
Publication Date:
April 29, 2004
Filing Date:
November 28, 2001
Export Citation:
Assignee:
IBIS TECHNOLOGY CORP (US)
International Classes:
H01L21/762; (IPC1-7): H01L21/265; H01L21/266; H01L21/762
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