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Title:
LOW ESL AND ESR CHIP CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2006/110287
Kind Code:
A1
Abstract:
A chip capacitor (100) that includes a first and second terminal (102,104) and a plurality of first and second conductive plates (108,106) . The first terminal has a first interfacial attachment area that (112) is adapted to be attached to a host- substrate. The second terminal has a second interfacial attachment area (114) also adapted to be attached to a host substrate. The first interfacial attachment area and the second interfacial attachment area seperated by at least one relatively thin isolation strip (103) such that the first and second interfacial attachment areas generally approach covering the entire attaching area of the chip capacitor. The plurality of first conductive plates are coupled to the first terminal and the plurality of second plates are coupled to the second terminal. In one embodiment, approximately 50% of the periphery of each first and second conductive plate is coupled to the respective first and second terminals.

Inventors:
SUNDSTROM LANCE L (US)
Application Number:
PCT/US2006/010709
Publication Date:
October 19, 2006
Filing Date:
March 22, 2006
Export Citation:
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Assignee:
HONEYWELL INT INC (US)
SUNDSTROM LANCE L (US)
International Classes:
H01G4/228; H01G2/06
Foreign References:
US20020101702A12002-08-01
US4648006A1987-03-03
Other References:
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12 5 December 2003 (2003-12-05)
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12 5 December 2003 (2003-12-05)
Attorney, Agent or Firm:
Hoiriis, David (101 COLUMBIA ROAD P.o. Box 224, Morristown New Jersey, US)
Download PDF:
Claims:
Claims
1. ' A chip capacitor (100, 200 or 300) comprising: a first terminal, the first terminal (102, 202 or 3021 and 3022) having a first interfacial attachment area (112, 212 or 3321 and 3322) adapted to be attached to a host substrate; . a second terminal (104, 204 or 3041 and 3042), the second terminal (104, 204 or 3041 and 3042) having a second interfacial attachment area (114, 214 or 3301 and 3302) adapted to be attached to a host substrate, first interfacial attachment area (112, 212 or 3321 and 3322) and the second interfacial attachment area (114, 214 or 3301 and 3302) being separated by at least one relatively thin isolation gap (103, 203 or 303) such that the first and second interfacial attachment areas ( 112, 212 or 332 1 and 3322), ( 114, 214 or 330 1 and 3302) generally approach covering the entire attaching area of the chip capacitor 100, 200 or 300); a plurality of first conductive plates (1081 through 108N, 2081 through 208N and 3061 through 306N) coupled to the first terminal (102, 202 or 3021 and 3022); and' a plurality of second conductive plates (1061 through 106N, 2061 through 206N and 3081 through 308N) coupled to the second terminal (104, 204 or 3041 and 3042), wherein the first plates (1081 through 108N, 2081 through 208N and 3061 through 306N) and the second plates (1061 through 106N, 2061 through 206N and 3081 through 308N) are stacked in a manner that alternates between the first and second plates, the first and second plates (1081 through 108N, 2081 through 208N and 3061 through 306N and 1061 through 106N, 2061 through 206N and 3081 through 308N) further being isolated from each other.
2. The chip capacitor ( 100, 200 or 300) of claim 1 , wherein the first terminal (102, 202 or 3021 and 3022) further comprises at least one first sidewall (1071, 1072, 2071 through 2073, 3071 and 3072), the plurality of first plates (1081 through 108N, 2081 through 208N and 3061 through 306N) being coupled along generally an entire interior vertical length of the at least one first sidewall(107 1, 1072, 2071 through 2073, 3071 and 3072), further wherein the second Honeywell Docket No. H00041121628 termirjal (104, 204 or 3041 and 3042) further comprises at least one second sidewall (1051, 1052, 2051 through 2053 and 3051 and 3052) and the plurality of second plates (1061 through 106N, 2061 through 206N and 3081 through 308N) being coupled along generally an entire interior vertical length of the at least one second sidewall (1051, 1052, 2051 through 2053 and 3051 and 3052).
3. The chip capacitor ( 100, 200 or 300) of claim 1 , wherein approximately 50% of an outer periphery of each first plate (1081 through 108N, 2081 through 208N and 3061 through 306N) is coupled to the first terminal (102, 202 or 3021 and 3022).
4. The chip capacitor (100, 200 or 300) of claim, wherein approximately 50% of an outer periphery of each second plate (1061 through 106N, 2061 through 206N and 3081 through 308N) is coupled to the second terminal (104, 204 or 3041 and 3042).
5. A chip capacitor (100, 200 or 300) comprising: a plurality of first conductive plates (1081 through 108N, 2081 through 208N and 3061 through 306N), each first plate having an outer periphery; a plurality of second conductive plates (1061 through 106N, 2061 through 206N and 3081 through 308N), each second plate having an outer periphery, the first and second plates (1081 through 108N, 2081 through 208N and 3061 through 306N and 1061 through 106N, 2061 through 206N and 3081 through 308N) being alternately stacked; isolation material (109, 209 or 309) separating the first and second alternately stacked first and second plates (1081 through 108N, 2081 through 208 N and 3061 through 306N and 1061 through 106N, 2061 through 206N and 3081 through 308N); at least one first terminal (102, 202 or 3021 and 3022), each first plate (1081 through 108N, 2081 through 208N and 3061 through 306N) being coupled to the first terminal (102, 202 or 3021 and 3022 ) such that approximately 50% of outer periphery of each first plate (1081 through 108N, 2081 through 208 Honeywell Docket No. H00041121628 N and 3061 through 306N) is coupled to the first terminal (102, 202 or 3021 and at least one second terminal (104, 204 or 3041 and 3042), each second plate (1061 through 106N, 2061 through 206N and 3081 through 308N) being coupled to the second terminal (104, 204 or 3041 and 3042) such that approximately 50% of the outer periphery of the each second plate (1061 through 106N, 2061 through 206N and 3081 through 308N) is coupled to the second terminal ( 104, 204 υr 304 1 and 3042).
6. The chip capacitor (300) of claim 5, further comprising: the first terminal having a first and second sections (3021 and 3022); and the second terminal having a first and second sections (3041 and 3042).
7. The chip capacitor (100, 200 and 300) of claim 5, wherein the shape of the first interfacial attachment area of the first terminal (102, 202 or 3021 and 3022) and the second interfacial attachment area of the second terminal (104, 204 or 3041 and 3042) is in the form of one of a single triangle, a double triangle and a rectangle.
8. A chip capacitor (100, 200 or 300) comprising: a stack of alternating first and second conductive plates (1081 through 108 N. and 3061 through 306N and 1061 through 106N and 3081 through 308N), the stack of first and second conductive plates (1081 through 108N and 3061 through 306N and 1061 through 106N and 3081 through 308N) being isolated from each other; a first terminal (102 or 3021 and 3022) having a first interfacial attachment surface (116, 3321 or 3322) adapted to be attached to a host substrate, the first interfacial attachment surface (116, 3321 or 3322) being in the shape of at least one triangle, a portion of a periphery of the first conductive plates (1081 through 108N and 3061 through 306N) being coupled to the first terminal (102 or 3021. or 3022); and Honeywell Docket No. H00041121628 ( a second terminal (104, 3041 or 3042) having a second interfacial attachment surface (118, 3301 or 3302) adapted to be attached to the host substrate, the second interfacial attachment surface (118, 3301 or 3302) being in the shape of at least one triangle, a portion of a periphery of the second conductive plates (1061 through 106N and 3081 through 308N) being coupled to the second terminal (104, 3041 or 3042).
9. A method of forming a chip capacitor (100, 200 or 300), the method comprising: forming a first interfacial attachment area (112, 212 or 3321 and 3322) of a first terminal (102, 202 or 3021 and 3022) the first interfacial attachment area (112, 212 or 3321 and 3322) adapted to be attached to a host substrate; forming a second interfacial attachment area (114, 214 or 3301 and 3302) of a second terminal (104, 204 or 3041 and 3042), the second interfacial attachment area (114, 214 or .3301 and 3302) adapted to be attached to a host substrate; forming at least one relatively small isolation gap (130) between the first interfacial attachment area (112, 212 or 3321 and 3322) and the second interracial attachment area (114, 214 or 3301 and 3302) such that almost an entire attaching surface of the chip capacitor (100, 200 or 300) is covered by the first and second interfacial attachment areas (1 12, 212 or 3321 and 3322 and 114, 214 or 3301 and 3302); and forming a stack of alternating first and second conducting plates (1081 through 108N, 2081 through 208N and 3061 through 306N and 1061 through 106N, 2061 through 206N and 3081 through 308N) separated by isolation material (109, 209 or 309), wherein the first conducting plates (1081 through 108 N, 2081 through 208N and 3061 through 306N) are formed to be coupled to the first terminal (102, 202 or 3021 and 3022) and the second conducting plates (1061 through 106N and 3081 through 308N) are formed to be coupled to the second terminal (104, 204 or 3041 and 3042), Honeywell Docket No. H00041121628 .
10. A method of forming a chip capacitor (100, 200 or 300), the method comprising: forming a first interfacial attachment area (112, 212 or 3321 and 3322) of a first terminal (102, 202 or 3021 and 3022), the first interfacial attachment area (112, 212 or 3321 and 3322) adapted to be attached to a host substrate; forming a second interfacial attachment (114, 214 or 3301 and 3302) of a second terminal (104, 204 or 3041 and 3042), the second interfacial attachment area (114, 214 or 3301 and 3302) adapted to be attached to a host substrate; forming at least one relatively small isolation gap (103, 203 or 303) between the first interfacial attachment area (112, 212 or 3321 and 3322) and the second interfacial attachment area (114, 214 or 3301 and 3302); forming a stack of alternating first and second conducting plates ( 108 1 through 108N, 2081 through 208N and 3061 through 306N and 1061 through 106N, 2061 through 206N and 3081 through 308N) separated by isolation material (109, 209 or 309) overlaying the first and second interfacial attachment areas (112, 212 or 3321 and 3322 and 114, 214 or 3301 and 3302); forming at least two sidewalls (1071, 1072, 2071 through 2073, or 3071 and 3072) extending from the first interfacial attachment area (112, 212 or 3321 and 3322), the first conducting plates (1081 through 108N, 2081 through 208N or 3061 through 306N) being coupled to the at least.two sidewalls (1.071, 1072, 2071 through 2073, or 3071 and 3072) wherein approximately 50% of an outer periphery of each first conducting plate (1081 through 108N, 2081 through 208N or 3061 through 306N) is coupled to the at least two sidewalls (1071, 1072, 207 1 through 2073, or 3071 and 3072) extending from the first interfacial attachment area (112, 212 or 3321 and 3322); and forming at least two sidewalls (1051 and 1052, 2051 through 2053 or 3051 and 3052) extending from the second interfacial attachment area (114, 214 or 3301 and 3302), the second conducting plates (106.1 through 106N, 2061 through 206N and 3081 through 308N) being coupled to the at least two sidewalls (1051 and 1052, 2051 through 2053 or 3051 and 3052) wherein approximately 50% of an outer periphery of each second conducting plate (1061 through 106N, 2061 through 206N and 3081 through 308N) is coupled to the at least two . Honeywell Docket No. H00041121628 006/010709 sidewajls (1051 and 1052, 2051 through 2053 or 3051 and 3052) extending from the second interfacial attachment area (114, 214 or 3301 and 3302).
Description:
LOW ESL AND ESR CHIP CAPACITOR

Technical Field The present invention relates generally to capacitors and in particular to chip capacitors.

Background

The terminals of a standard chip capacitor (e.g. ceramic or metalized stacked film) are comprised primary of surface conductors on opposite ends of the capacitor body. Each terminal may cover the end and may extend slightly around one or more edges (e.g. top, bottom and sides) towards the opposite terminal. The interfacial attachment area of an assembled chip capacitor is limited to the intersection of its terminal area on the bottom side of the capacitor and the mating capacitor footprint of its host substrate. This interface area is typically insufficient for a good electrical and mechanical connection. To compensate for this, the attach pads of the capacitor footprint extend beyond the length and width of the capacitor end terminals to allow formation of peripheral, solder fillets up the sides and ends of the terminals. These fillets increase the capacitor solder attach area sufficiently for good electrical and mechanical connection to its host substrate. However, the use of solder fillets to increase the capacitor solder area are prone to tomb-stoning. Tomb- stoning occurs when a chip component becomes partially or completely lifted off one end of the surface of a bonding pad of an integrated circuit. Tomb-stoning typically occurs from surface tension in the end fillets during solder reflow attach processes. Moreover, the use of solder fillets extends the area needed for the chip capacitor.

In addition, each internal conductor plate of a standard chip capacitor is connected along one edge of its periphery to one end surface terminals. Most standard Electronic Industries Alliance (EIA) size chip capacitors terminate each plate along one narrow edge, giving the capacitor body and its plates a forward length-to-width aspect ratio (length/width > 1). Capacitor and plate length is defined here as the terminal to terminal dimension. Some non-standard chip capacitors terminate each plate along a width edge, giving the capacitor and its

plates a reverse aspect ratio (length/width <1). A capacitor's equivalent series inductance (ESL) and equivalent series resistance (ESR) is proportional to its plate aspect ratio. A lower plate aspect ratio results in lower ESL and ESR as well as better capacitor performance. For the reasons stated above and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a chip capacitor that has an improved interfacial attachment area and an improved effective plate aspect ratio.

Summary of Invention The above-mentioned problems of current systems are addressed by embodiments of the present invention and will be understood by reading and studying the following specification.

In one embodiment, a chip capacitor is provided. The chip capacitor includes a first and second terminal and a plurality of first and second conductive plates. The first terminal has a first interfacial attachment area that is adapted to be attached to a host substrate. The second terminal has a second interfacial attachment area also adapted to be attached to a host substrate. The first interfacial attachment area and the second interfacial attachment area separated by at least one relatively thin isolation strip such that the first and second interfacial attachment areas generally approach covering the entire attaching area of the chip capacitor. The plurality of first conductive plates are coupled to the first terminal. Moreover, the plurality of second conductive plates are coupled to the second terminal. The first plates and the second plates are stacked in a manner that alternates between the first and second plates. In addition, the first and second plates are isolated from each other.

In another embodiment, another chip capacitor is provided. The chip capacitor includes a plurality of first conductive plates, a plurality of second conductive plates, isolation material, at least one first terminal and at least one second terminal. Each first and second plate has an outer periphery. Moreover, the first and second plates are alternately stacked. The isolation material separates the first and second alternately stacked first and second plates. The first plate is coupled

to the first terminal such that approximately 50% of an outer periphery of each first plate is coupled to the first terminal. In addition, the second plate is coupled to the second terminal such that approximately 50% of an outer periphery of the each second plate is coupled to the second terminal. Brief Description of the Drawings

The present invention can be more easily understood and further advantages and uses thereof more readily apparent, when considered in view of the description of the preferred embodiments and the following figures in which:

Figure ] A is a top view of a chip capacitor of one embodiment of the present invention;

Figure IB is a bottom view of the chip capacitor of Figure IA; Figure 1C is a side view of the chip capacitor of Figure IA; Figure ID is a cross-sectional view along A-A of Figure iA; Figure IE is a cross-sectional view along B-B of Figure 1C; Figure 2A is a top view of a chip capacitor of another embodiment of the present invention;

Figure 2B is a bottom view of the chip capacitor of Figure 2A; Figure 2C is a side view of the chip capacitor of Figure 2A; Figure 2D is a cross-sectional view along A-A of Figure 2A; Figure 2E is a cross-sectional view along B-B of Figure 2C;

Figure 3A is a top view of a chip capacitor of yet another embodiment of the present invention;

Figure 3B is a bottom view of the chip capacitor of Figure 3A; Figure 3C is a side view of the chip capacitor of Figure 3A; Figure 3D is a cross-sectional view along A-A of Figure 3A; and

Figure 3E is a cross-sectional view along B-B of Figure 3C.

, In accordance with common practice, the various described features are not drawn to scale but are drawn to emphasize specific features relevant to the present invention. Reference characters denote like elements throughout Figures and text. Detailed Description

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the inventions may be practiced. These . embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the claims and equivalents thereof. Embodiments of the present invention provide increased interfacial terminal attachment area so as to reduce or eliminate the need for peripheral solder fillets to establish good electrical and mechanical connections. This reduces the chip capacitor's footprint size and also reduces or eliminates tomb-stoning during solder reflow processes. In further embodiments, additional terminals and modified internal plates are used to connect all available terminal areas. Moreover, in one embodiment, the percentage of terminal plate edge termination approaches 50% of each plate's entire periphery. This reduces the effective plate aspect ratio and the larger terminal areas reduce current densities. In addition, embodiments of the present invention reduce capacitor ESL and ESR and provide increased performance.

Referring to Figure 1, a top view of a chip capacitor 100 of one embodiment of the present invention is illustrated. As illustrated, chip capacitor 100 includes a first terminal 102 and a second terminal 104. The first terminal 102 as a first top section 116 which is separated from a second top section 118 of the second terminal 104 by an isolation gap 103. The isolation gap 103 may be air or any type of dielectric material that has a high resistance to the flow of current. In this

Honeywell Docket No. H0004112-1628

embodiment, the rectangular chip capacitor 100 includes triangular surface terminals (the first terminal 102 and the second terminal 104) on opposite corners. Figure IB is a bottom view of the chip capacitor 100. The bottom view of Figure IB illustrates the total attaching area of chip capacitor 100. In particular, Figure 3B illustrates a first interfacial attachment area 112 of the first terminal 102 and a second interfacial attachment area 114 of the second terminal 104. The first and second interfacial attachment areas 1 12 and 114 are adapted to be attached to a mating capacitor footprint of a host substrate. Only a relatively thin isolation gap 103 is used to separate the first and second interfacial attachment areas 112 and 114. Accordingly, in this embodiment, almost the entire attaching area of the chip capacitor 100 is made up of the first and second interfacial attachment areas 112 and 114. This reduces or eliminates the need for fillets.

Figure 1C is a side view of the chip capacitor 100 illustrating a sidewall 105-2 of the second terminal 104. Figure ID is a cross-sectional view along line A- A of Figure 1. As illustrated, the chip capacitor 100 includes a plurality of stacked conductive plates 106-1 through 106-N and 108-1 and 108-N which are separated by isolation layers 109. As illustrated, the first terminal 102 includes the first interfacial attachment area 112, sidewalls 107-1 and 107-2 (see Figure IE), and top section .116 which encase a first portion of the first and second conductive plates 106-1 through 106-N and 108-1 and 108-N. The second terminal 104 includes the second interfacial attachment area 114, sidewalls 105-1 and 105-2 (see Figure IE), and top section 118 which encase a second portion of the first and second conductive plates 106-1 through 106-N and 108-1 and 108-N. In this embodiment, plates 106-1 through 106-N are coupled along the vertical length of sidewalls 105-1 and 105-2 of the second terminal 104. Plates 108-1 through 108-N are coupled along a vertical length of sidewalls 107-1 and 107-2 of the first terminal 102. Figure IE is a cross-sectional view along line B-B of Figure 1C. Figure IE illustrates, a plate 106-M coupled to side walls 105-1 and 105-2 of the second terminal 104 and plate 108-M coupled to sidewalls 107-1 and 107-2 of the first terminal 102. As illustrated, in this embodiment, each plate is terminated on two adjacent sides such that plate termination of each conductive plate approaches 50%

of its periphery. This reduces the effective plate aspect ratio and reduces current densities.

1 Figures 2A through 2E illustrate another embodiment of a chip capacitor

200 of the present invention. Figure 2A is a top view illustrating the chip capacitor 200 has a first terminal 202 with a first top section 216 and a second terminal 204 with a second top section 218. Both the first and second top sections 216 and 218 have rectangular forms. As illustrated, the first and second top sections 216 and 218 of the first and second terminals 202 and 204 are separated by 1 an isolation gap . 203. The isolation gap is air or a material that has a relatively high resistance to current flow. Figure 2B illustrates a bottom view of the chip capacitor 200. The bottom view illustrates the total attachment area of the chip capacitor 200. In particular, Figure 2B illustrates a first interfacial attaching area 212 of the first terminal 202 and a second interfacial attaching area 214 of the second terminal 204. The first and second interfacial attaching areas 212 and 214 are adapted to be coupled to a host substrate. Only a relatively thin isolation gap 203 separates the first and second interfacial attaching areas 212 and 214 from each other. Accordingly, almost the entire potential attaching area is covered by the first and second interfacial attaching areas 212 and 214 which reduces or eliminates the need for fillets. Figure 2C illustrates a side view of the chip capacitor 200. As illustrated this side view includes a first sidewall 207-3 of the first terminal 202 and a. second sidewall 205-3 of the second terminal 204 which are separated by the isolation gap 203. Referring to Figure 2D, a cross-sectional view along line A-A of Figure 1 is illustrated. As illustrated plates 206-1 through 206-N are connected along a vertical length of sidewall 205-1 (as well as side walls 205-2 and 205-3 as illustrated in Figure 2E) of the second terminal 204. Plates 208-1 through 208-N are connected along a vertical length of sidewall 207-1 (as well as sidewalls 207-2 and 207-3 as illustrated in Figure 2E) of the first terminal 202. As illustrated and described the first terminal 102 encases a first portion of plates 206-1 through 206-N and 108-1 through 108-N and the second terminal 104 encases a second portion of plates 206-1 through 206-N and 108-1 through 108-N. Figure 2E is a cross-sectional view along line B-B of Figure 2B. Figure 2E illustrates the shapes of plate 206-M which is Honeywell Docket No. H0004112-1628

coupled to sidewalls 205-1 , 205-2 and 205-3 of the second terminal 204 and plate 208-M which is coupled to sidewalls 207-1 , 207-2 and 207-3 of terminal 202. As illustrated, in this embodiment, each conductive plate 206-1 through 206-N and 208- 1 through 208-N is connected to three associated adjacent sidewalls such that approximately 50% of the periphery of each plate is attached to its associated sidewall. This reduces the effective plate aspect ratio and reduces current densities.

Figures 3A through 3E illustrate another embodiment of a chip capacitor 300 of the present invention. Figure 3A is a top view illustrating the chip capacitor 300 has a first terminal which is made up of first terminal sections 302-1 and 302-2 and a second terminal which is made up of second terminal section 304-1 and 304-2. Further the first terminal section 302-1 of the first terminal includes the top section 320-1 and the first terminal section 302-2 of the first terminal includes top section 320-2. The second terminal section 304-1 of the second terminal includes the top section 322-1 and the second terminal section 304-2 of the second terminal includes top section 322-2. As illustrate in the top view of Figure 3A and the bottom view of Figure 3B, the first terminal sections 302-1 and 302-2 and the second terminal sections 304-1 and 304-2 are each split into triangle sections separated by an isolation layer 303. The isolation gap 303 is made from air or a material that has a relative high resistance to current flow. In Figure 3B the bottom view of the chip capacitor 300 is illustrated.

The Bottom view illustrates the entire attaching surface of the chip capacitor 300. As illustrated, the first terminal section.302-1 includes interfacial attaching area 332- 1. First terminal section 302-2 includes interfacial attaching area 332-2. Second terminal section 304-1 includes interfacial attaching area 330-1 and second terminal section 304-2 includes interfacial attaching section 330-2. The first and second interfacial attaching areas 332-1 , 332-2, 330-1 and 330-2 are adapted to be attached to a mating capacitor footprint of a host substrate. As illustrated, the first and second interfacial attaching areas 332-1, 332-2, 330-1 and 330-2 are only separated by isolation gap 303 which has two parts that form an x-shape in this embodiment. Accordingly, almost the entire potential attaching area of the chip capacitor 300 is covered by the first and second interfacial attaching areas 332-1 , 332-2, 330-1 and 330-2 which reduces or eliminates the need for fillets. Honeywell Docket No. H0004112-1628

, Figure 3C is a side view of the chip capacitor 300 illustrating sidewall 307-2 of the first terminal 302-1. Referring to Figure 3D, a cross-sectional view along line A-A of Figure 1 is illustrated. As illustrated, plates 308-1 through 308-N are connected along a vertical length of sidewalls 305-1 and 305-2 of the first and section sections 304-1 and 304-2 of the second terminal. Plates 306-1 through 306- N are coupled to sidewalls of the first and second sections 302-1 and 302-2 of the first terminal. This is illustrated in the cross-sectional view along ' line B-B of Figure 3B in Figure 3E. In particular, plate 306-M is illustrated as being coupled to sidewall 307-1 of the second section 302-2 of the first terminal and sidewall 307-2 of the first section 302-1 of the first' terminal. Also illustrated in Figure 3E is plate 308-M coupled to sidewalls 305-1 and 305-2 of the first and second sections 304-1 and 304-2 of the second terminal. As with the other embodiments, in this embodiment approximately 50% of an outer periphery of each conductive plate is couple to its associated terminals. Referring back to Figures 3 A through 3D, an example of a method of forming one embodiment of the present invention is provided. First a layer of conductive material is deposited and patterned to form the interfacial attaching areas 330-1, 330-2, 332-1 and 332-2. The layers of conductive plates 306-6 through 306- N and 108-1 through 108-N and the insolating material are then formed by deposit techniques using masks and patterning as known in the art. The side walls 305-1, 305-2, 307-1 and 307-2 are then formed. In one embodiment this is done with etching and depositing techniques known in the art. The top sections 320-1, 320-2, 322-1 and 322-2 are then deposited and patterned. Although the above describes techniques and methods to form embodiments of the present invention, it will be understood in the art that other techniques and methods known in the art to form chip capacitors could be used and that the present invention is not limited to the methods of formation as described above. In addition, although each of the embodiments of chip capacitors shown in Figures IA, 2A and 3 A illustrate almost the entire top surface being covered with their respective tops sections of the first and second terminals, in other embodiments this is not the case.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any . Honeywell Docket No. H0004112-1628

arrangement, which is calculated to achieve the same purpose, may be substituted for the specific embodiment shown. This application is intended to cover any adaptations or variations of the present invention. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.