LOW-PRESSURE DEPOSITION OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS

WIPO Patent Application WO2005033357

A3

A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500<0> C, by utilizing a residence time less than about 120 msec.

YAMASAKI HIDEAKI (JP)
MATSUDA TSUKASA (JP)
GOMI ATSUSHI (JP)
HATANO TATSUO (JP)
SUGIURA MASAHITO (JP)
KAWANO YUMIKO (JP)
LEUSINK GERT J (US)
MCFEELY FENTON R (US)
MALHOTRA SANDRA G (US)

PCT/US2004/028894

June 23, 2005

September 07, 2004

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TOKYO ELECTRON LTD (JP)
IBM (US)
YAMASAKI HIDEAKI (JP)
MATSUDA TSUKASA (JP)
GOMI ATSUSHI (JP)
HATANO TATSUO (JP)
SUGIURA MASAHITO (JP)
KAWANO YUMIKO (JP)
LEUSINK GERT J (US)
MCFEELY FENTON R (US)
MALHOTRA SANDRA G (US)

C23C16/16; H01L21/285; C23C16/44; (IPC1-7): C23C16/16; C23C16/455

US20030008070A1	2003-01-09
US5853804A	1998-12-29

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