Title:
LOW-TEMPERATURE POLY-SILICON TFT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/054271
Kind Code:
A1
Abstract:
Provided is a low-temperature poly-silicon TFT substrate. A black matrix (2) of said substrate is located on a first buffer layer (31) of the low-temperature poly-silicon TFT substrate (1). A TFT device is located in the region covered by the black matrix (2). This can prevent the TFT device from being influenced by illumination, ensuring the stability of the TFT device. Moreover, the process of manufacturing a shielding metal layer is left out, and a photo-mask is retrenched, saving the production cost, such that the black matrix, instead of a shielding metal layer in the prior art, can further shield the TFT device from light while achieving the black matrix's own effect (shielding light leakage of the pixel), achieving double effects.
Inventors:
XU YONG (CN)
Application Number:
PCT/CN2015/092792
Publication Date:
April 06, 2017
Filing Date:
October 26, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L27/12
Foreign References:
| CN104218092A | 2014-12-17 | |||
| CN103268878A | 2013-08-28 | |||
| CN104332477A | 2015-02-04 | |||
| CN102738198A | 2012-10-17 | |||
| CN104218093A | 2014-12-17 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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