Title:
LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2016/086484
Kind Code:
A1
Abstract:
Provided in the embodiment of the present invention is a low-temperature polycrystalline silicon thin-film transistor and a manufacturing method thereof, comprising: forming an N+Si doped layer on a substrate layer by depositing materials including silane, hydrogen phosphide and hydrogen, and forming a first doped layer and a second doped layer which are opposite to each other; and depositing a-Si amorphous silicon layer on the N+Si doped layer, subjecting the a-Si amorphous silicon layer to laser annealing and a pattern etching treatment, forming an a-Si amorphous silicon layer between the first doped layer and the second doped layer, forming a first lightly doped drain electrode end between the first doped layer and the a-Si amorphous silicon layer, and a second lightly doped drain electrode end between the first doped layer and the a-Si amorphous silicon layer respectively, and forming a first phosphorus material structure on the first doped layer and the first lightly doped drain electrode end, and a second phosphorus material structure on the second doped layer and the second lightly doped drain electrode end. In the present invention, by the high temperature effect of laser annealing, the N+Si doped layer is used for forming the lightly doped drain electrode ends and the phosphorus material structures, such that the number of use of a photomask is reduced, and the manufacturing process flow is simplified.
More Like This:
| JPH0974190 | SEMICONDUCTOR DEVICE |
| WO/2007/072655 | LATERAL SOI SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF |
| JPH09270466 | SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
Inventors:
LI SONGSHAN (CN)
ZHANG XIAOXING (CN)
ZHANG XIAOXING (CN)
Application Number:
PCT/CN2014/095567
Publication Date:
June 09, 2016
Filing Date:
December 30, 2014
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/336; H01L21/268; H01L21/324; H01L29/06; H01L29/08; H01L29/786
Foreign References:
| CN103839826A | 2014-06-04 | |||
| CN103000531A | 2013-03-27 | |||
| TW201448178A | 2014-12-16 | |||
| CN1525554A | 2004-09-01 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
深圳市威世博知识产权代理事务所（普通合伙） (CN)
深圳市威世博知识产权代理事务所（普通合伙） (CN)
Download PDF: