Title:
LOW-TEMPERATURE SINTERING BONDING MATERIAL USING EXOTHERMIC REACTION CAUSED BY NANO-GRAIN SIZE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/171526
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a low-temperature sintering bonding material comprising a metal element, the method comprising the steps of: preparing an aqueous alloy plating solution comprising at least one metal salt; configuring an electroplated circuit by immersing an electrode in the aqueous alloy plating solution; applying a reduction potential to the electrode by applying, to a control unit for controlling the electroplated circuit, a square pulse voltage having a first voltage (V1) and a second voltage (V2) lower than the first voltage (V1), in accordance with the reduction potential value of the metal salt to be plated; and forming an amorphous metal plating film to have a grain size of 10 nm to 150 nm by reducing the metal salt. According to the present invention, composite multiple layers can be easily formed in a short time through a low-priced apparatus by alternately applying a potential (voltage) from the power supply capable of providing the potential while the base material is immersed in a plating bath containing two or more metal salts, the plating thicknesses of respective layers can be adjusted by regulating the time and current density for each potential cycle, and the number of composite layers can be easily adjusted by the number of potential cycles.
Inventors:
KIM KYUNG HEUM (KR)
LEE JUN HYEONG (KR)
CHU YONG CHEOL (KR)
JUNG JAE PIL (KR)
LEE JUN HYEONG (KR)
CHU YONG CHEOL (KR)
JUNG JAE PIL (KR)
Application Number:
PCT/KR2016/004270
Publication Date:
October 27, 2016
Filing Date:
April 22, 2016
Export Citation:
Assignee:
DUKSAN HIGH METAL CO LTD (KR)
International Classes:
C25D5/10; C25D3/02; C25D5/16; C25D7/06
Foreign References:
| KR101193960B1 | 2012-10-26 | |||
| KR20120068560A | 2012-06-27 | |||
| KR20140145678A | 2014-12-24 | |||
| JP2004114123A | 2004-04-15 | |||
| KR101175062B1 | 2012-08-21 |
Attorney, Agent or Firm:
TW INTERNATIONAL PATENT AND LAW FIRM (KR)
특허법인 태웅 (KR)
특허법인 태웅 (KR)
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